Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide

Byeong Kwon Ju, Heung Woo Park, Yun-Hi Lee, In Jae Chung, M. R. Haskard, Jung ho Park, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages221-225
Number of pages5
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

molybdenum
field emission
emitters
electric potential
silicon
high vacuum
plots
etching
oxidation
ions

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Ju, B. K., Park, H. W., Lee, Y-H., Chung, I. J., Haskard, M. R., Park, J. H., & Oh, M. H. (1996). Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 221-225). Piscataway, NJ, United States: IEEE.

Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide. / Ju, Byeong Kwon; Park, Heung Woo; Lee, Yun-Hi; Chung, In Jae; Haskard, M. R.; Park, Jung ho; Oh, Myung Hwan.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 221-225.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ju, BK, Park, HW, Lee, Y-H, Chung, IJ, Haskard, MR, Park, JH & Oh, MH 1996, Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 221-225, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Ju BK, Park HW, Lee Y-H, Chung IJ, Haskard MR, Park JH et al. Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1996. p. 221-225
Ju, Byeong Kwon ; Park, Heung Woo ; Lee, Yun-Hi ; Chung, In Jae ; Haskard, M. R. ; Park, Jung ho ; Oh, Myung Hwan. / Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. pp. 221-225
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abstract = "Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.",
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