Field emission properties of ta-C films with nitrogen doping

Kyu Chang Park, Jong Hyun Moon, Suk Jae Chung, Jae Hoon Jung, Byeong Kwon Ju, Myung Hwan Oh, W. I. Milne, Min Koo Han, Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages298-302
Number of pages5
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

ASJC Scopus subject areas

  • Surfaces and Interfaces

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  • Cite this

    Park, K. C., Moon, J. H., Chung, S. J., Jung, J. H., Ju, B. K., Oh, M. H., Milne, W. I., Han, M. K., & Jang, J. (1996). Field emission properties of ta-C films with nitrogen doping. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 298-302). IEEE.