Field emission properties of ta-C films with nitrogen doping

Kyu Chang Park, Jong Hyun Moon, Suk Jae Chung, Jae Hoon Jung, Byeong Kwon Ju, Myung Hwan Oh, W. I. Milne, Min Koo Han, Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages298-302
Number of pages5
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

field emission
nitrogen
carbon
electron emission
conduction bands
conductivity
shift
room temperature

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Park, K. C., Moon, J. H., Chung, S. J., Jung, J. H., Ju, B. K., Oh, M. H., ... Jang, J. (1996). Field emission properties of ta-C films with nitrogen doping. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 298-302). Piscataway, NJ, United States: IEEE.

Field emission properties of ta-C films with nitrogen doping. / Park, Kyu Chang; Moon, Jong Hyun; Chung, Suk Jae; Jung, Jae Hoon; Ju, Byeong Kwon; Oh, Myung Hwan; Milne, W. I.; Han, Min Koo; Jang, Jin.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 298-302.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, KC, Moon, JH, Chung, SJ, Jung, JH, Ju, BK, Oh, MH, Milne, WI, Han, MK & Jang, J 1996, Field emission properties of ta-C films with nitrogen doping. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 298-302, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Park KC, Moon JH, Chung SJ, Jung JH, Ju BK, Oh MH et al. Field emission properties of ta-C films with nitrogen doping. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1996. p. 298-302
Park, Kyu Chang ; Moon, Jong Hyun ; Chung, Suk Jae ; Jung, Jae Hoon ; Ju, Byeong Kwon ; Oh, Myung Hwan ; Milne, W. I. ; Han, Min Koo ; Jang, Jin. / Field emission properties of ta-C films with nitrogen doping. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. pp. 298-302
@inproceedings{9729f18a5e7b4476ba4514a3335a7a6a,
title = "Field emission properties of ta-C films with nitrogen doping",
abstract = "We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.",
author = "Park, {Kyu Chang} and Moon, {Jong Hyun} and Chung, {Suk Jae} and Jung, {Jae Hoon} and Ju, {Byeong Kwon} and Oh, {Myung Hwan} and Milne, {W. I.} and Han, {Min Koo} and Jin Jang",
year = "1996",
month = "12",
day = "1",
language = "English",
pages = "298--302",
booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",
publisher = "IEEE",

}

TY - GEN

T1 - Field emission properties of ta-C films with nitrogen doping

AU - Park, Kyu Chang

AU - Moon, Jong Hyun

AU - Chung, Suk Jae

AU - Jung, Jae Hoon

AU - Ju, Byeong Kwon

AU - Oh, Myung Hwan

AU - Milne, W. I.

AU - Han, Min Koo

AU - Jang, Jin

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.

AB - We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.

UR - http://www.scopus.com/inward/record.url?scp=0030349721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030349721&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030349721

SP - 298

EP - 302

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

ER -