Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolayer field-effect transistors

Jinho Bae, Hyoung Woo Kim, In Ho Kang, Ji Hyun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)


The narrow voltage swing of a nanoelectronic device limits its implementations in electronic circuits. Nanolayer β-Ga 2 O 3 has a superior breakdown field of approximately 8 MV cm −1 , making it an ideal candidate for a next-generation power device nanomaterial. In this study, a field modulating plate was introduced into a β-Ga 2 O 3 nano-field-effect transistor (nanoFET) to engineer the distribution of electric fields, wherein the off-state three-terminal breakdown voltage was reported to be 314 V. β-Ga 2 O 3 flakes were separated from a single-crystal bulk substrate using a mechanical exfoliation method. The layout of the field modulating plate was optimized through a device simulation to effectively distribute the peak electric fields. The field-plated β-Ga 2 O 3 nanoFETs exhibited n-type behaviors with a high output current saturation, exhibiting excellent switching characteristics with a threshold voltage of −3.8 V, a subthreshold swing of 101.3 mV dec −1 , and an on/off ratio greater than 10 7 . The β-Ga 2 O 3 nanoFETs with a high breakdown voltage of over 300 V could pave a way for downsizing power electronic devices, enabling the economization of power systems.

Original languageEnglish
Pages (from-to)9678-9683
Number of pages6
JournalRSC Advances
Issue number17
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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