Fine-grain voltage tuned cache architecture for yield management under process variations

Joonho Kong, Yan Pan, Serkan Ozdemir, Anitha Mohan, Gokhan Memik, Sung Woo Jung

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Process variations cause large fluctuations in performance and power consumption in the manufactured chips, which eventually results in yield losses. In this paper, to mitigate access time failures and excessive leakage in caches, we propose a novel selective wordline boosting mechanism combined with SRAM cell arrays voltage lowering. Based on our evaluation, the proposed approach recovers up to 83.1% of the yield losses.

Original languageEnglish
Article number5936660
Pages (from-to)1532-1536
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume20
Issue number8
DOIs
Publication statusPublished - 2012 Jan 1

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Static random access storage
Electric potential
Electric power utilization

Keywords

  • Cache
  • process variation
  • selective wordline voltage boosting
  • supply voltage lowering
  • yield

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Software

Cite this

Fine-grain voltage tuned cache architecture for yield management under process variations. / Kong, Joonho; Pan, Yan; Ozdemir, Serkan; Mohan, Anitha; Memik, Gokhan; Jung, Sung Woo.

In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 20, No. 8, 5936660, 01.01.2012, p. 1532-1536.

Research output: Contribution to journalArticle

Kong, Joonho ; Pan, Yan ; Ozdemir, Serkan ; Mohan, Anitha ; Memik, Gokhan ; Jung, Sung Woo. / Fine-grain voltage tuned cache architecture for yield management under process variations. In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2012 ; Vol. 20, No. 8. pp. 1532-1536.
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