Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

Dong Il Kim; Young Ki Hong; Suk Ho Lee; Jeongyong Kim; Jinsoo Joo

doi:10.1016/j.cap.2014.06.025

Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

Dong Il Kim, Young Ki Hong, Suk Ho Lee, Jeongyong Kim, Jinsoo Joo

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 10¹⁷-1.0 × 10¹⁸ electrons/cm². The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

Original language	English
Pages (from-to)	1228-1233
Number of pages	6
Journal	Current Applied Physics
Volume	14
Issue number	9
DOIs	https://doi.org/10.1016/j.cap.2014.06.025
Publication status	Published - 2014 Sept

Keywords

Electron irradiation
Focused electron beam
Nanowire
Photoluminescence
ZnO

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2014.06.025

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@article{ecb4dc97b8344adb81abdcd930df764e,

title = "Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation",

abstract = "ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.",

keywords = "Electron irradiation, Focused electron beam, Nanowire, Photoluminescence, ZnO",

author = "Kim, {Dong Il} and Hong, {Young Ki} and Lee, {Suk Ho} and Jeongyong Kim and Jinsoo Joo",

note = "Funding Information: We acknowledge the financial support from National Research Foundation (NRF) grants funded by the Korean Government (The Ministry of Science, ICT and Future Planning (MSIP)) (No. 2012R1A2A2A01045102 and No. 2012R1A1A2A10043220 ). In addition, J. Kim would like to acknowledge financial support received from the Institute for Basic Science (IBS) (EM 1304 ) in Korea. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2014",

month = sep,

doi = "10.1016/j.cap.2014.06.025",

language = "English",

volume = "14",

pages = "1228--1233",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "9",

}

TY - JOUR

T1 - Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

AU - Kim, Dong Il

AU - Hong, Young Ki

AU - Lee, Suk Ho

AU - Kim, Jeongyong

AU - Joo, Jinsoo

N1 - Funding Information: We acknowledge the financial support from National Research Foundation (NRF) grants funded by the Korean Government (The Ministry of Science, ICT and Future Planning (MSIP)) (No. 2012R1A2A2A01045102 and No. 2012R1A1A2A10043220 ). In addition, J. Kim would like to acknowledge financial support received from the Institute for Basic Science (IBS) (EM 1304 ) in Korea. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2014/9

Y1 - 2014/9

N2 - ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

AB - ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

KW - Electron irradiation

KW - Focused electron beam

KW - Nanowire

KW - Photoluminescence

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84904313738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904313738&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2014.06.025

DO - 10.1016/j.cap.2014.06.025

M3 - Article

AN - SCOPUS:84904313738

SN - 1567-1739

VL - 14

SP - 1228

EP - 1233

JO - Current Applied Physics

JF - Current Applied Physics

IS - 9

ER -

Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

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Keywords

ASJC Scopus subject areas

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