Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

Dong Il Kim, Young Ki Hong, Suk Ho Lee, Jeongyong Kim, Jinsoo Joo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

Original languageEnglish
Pages (from-to)1228-1233
Number of pages6
JournalCurrent Applied Physics
Volume14
Issue number9
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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