First demonstration of the gain switching characteristics of an AlGaAs-GaAs V-grooved quantum wire laser

Tae Geun Kim, Y. Suzuki, M. Shimiz, M. Ogura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report for the first time the generation of short optical pulses with oxide-isolated stripe, V-grooved AlGaAs-GaAs quantum wire diode lasers. The shortest pulse width of 21 ps is currently achieved for a 350 μm long uncoated device by a streak-camera, with electrical pulses of 350 ps wide and 15 V high. The spectral characteristics of the gain switched QWR laser are also presented.

Original languageEnglish
Pages (from-to)2093-2096
Number of pages4
JournalSolid-State Electronics
Volume43
Issue number11
DOIs
Publication statusPublished - 1999 Nov 1
Externally publishedYes

Fingerprint

Semiconductor quantum wires
quantum wires
aluminum gallium arsenides
Laser pulses
Demonstrations
Streak cameras
streak cameras
Lasers
pulses
Oxides
lasers
Semiconductor lasers
pulse duration
semiconductor lasers
oxides
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

First demonstration of the gain switching characteristics of an AlGaAs-GaAs V-grooved quantum wire laser. / Kim, Tae Geun; Suzuki, Y.; Shimiz, M.; Ogura, M.

In: Solid-State Electronics, Vol. 43, No. 11, 01.11.1999, p. 2093-2096.

Research output: Contribution to journalArticle

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