Abstract
Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4-300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift approximately 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.
| Original language | English |
|---|---|
| Pages (from-to) | 508-512 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 7 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2000 May 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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First room temperature lasing from the fundamental state of V-grooved quantum wire lasers. / Kim, Tae Geun; Wang, X. L.; Kaji, R.; Ogura, M.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 7, No. 3, 01.05.2000, p. 508-512.Research output: Contribution to journal › Article
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TY - JOUR
T1 - First room temperature lasing from the fundamental state of V-grooved quantum wire lasers
AU - Kim, Tae Geun
AU - Wang, X. L.
AU - Kaji, R.
AU - Ogura, M.
PY - 2000/5/1
Y1 - 2000/5/1
N2 - Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4-300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift approximately 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.
AB - Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4-300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift approximately 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.
UR - http://www.scopus.com/inward/record.url?scp=0033726254&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033726254&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(99)00369-0
DO - 10.1016/S1386-9477(99)00369-0
M3 - Article
AN - SCOPUS:0033726254
VL - 7
SP - 508
EP - 512
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 3
ER -