TY - JOUR
T1 - First room temperature lasing from the fundamental state of V-grooved quantum wire lasers
AU - Kim, T. G.
AU - Wang, X. L.
AU - Kaji, R.
AU - Ogura, M.
N1 - Funding Information:
This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of the Femtosecond Technology Research Association (FESTA). The authors are grateful to Drs. H. Yajima, M. Watanabe, M. Shimizu, T. Sakamoto, Y. Sugiyama at ETL, and Dr. K. Asakawa at FESTA in Japan for their encouragement.
PY - 2000/5
Y1 - 2000/5
N2 - Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4-300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift approximately 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.
AB - Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4-300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift approximately 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.
UR - http://www.scopus.com/inward/record.url?scp=0033726254&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(99)00369-0
DO - 10.1016/S1386-9477(99)00369-0
M3 - Conference article
AN - SCOPUS:0033726254
VL - 7
SP - 508
EP - 512
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 3
T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures
Y2 - 12 July 1999 through 16 July 1999
ER -