First room temperature lasing from the fundamental state of V-grooved quantum wire lasers

Tae Geun Kim, X. L. Wang, R. Kaji, M. Ogura

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4-300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift approximately 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.

Original languageEnglish
Pages (from-to)508-512
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May 1
Externally publishedYes

Fingerprint

Semiconductor quantum wires
quantum wires
lasing
Lasers
room temperature
lasers
Epitaxial growth
epitaxy
Temperature
flow velocity
Flow rate
Modulation
modulation
Electron transitions
Oxides
Electron energy levels
Ground state
energy bands
aluminum gallium arsenides
Photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

First room temperature lasing from the fundamental state of V-grooved quantum wire lasers. / Kim, Tae Geun; Wang, X. L.; Kaji, R.; Ogura, M.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 7, No. 3, 01.05.2000, p. 508-512.

Research output: Contribution to journalArticle

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