Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Min Kyu Joo, Mireille Mouis, Dae Young Jeon, Sylvain Barraud, So Jeong Park, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This paper presents the low-temperature characteristics of flat-band (VFB) and low-field mobility in accumulation regime (μ0-acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate VFB. Additionally, the gate oxide capacitance per unit area Cox and the doping concentration ND were evaluated as well. Accounting for the position of VFB and the charge based analytical model of JLTs, bulk mobility (μB) and μ0-acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of μB and μ0-acc with gate length in planar and tri-gate nanowire JLTs.

Original languageEnglish
Article number045024
JournalSemiconductor Science and Technology
Volume29
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Transistors
transistors
Electric potential
electric potential
Capacitance
capacitance
Temperature measurement
Temperature
Oxides
Nanowires
Analytical models
Doping (additives)
Scattering
temperature measurement
Degradation
Defects
nanowires
degradation
conduction
oxides

Keywords

  • flat-band voltage
  • junctionless transistors
  • low-field mobility
  • neutral defects scattering
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature. / Joo, Min Kyu; Mouis, Mireille; Jeon, Dae Young; Barraud, Sylvain; Park, So Jeong; Kim, Gyu-Tae; Ghibaudo, Gérard.

In: Semiconductor Science and Technology, Vol. 29, No. 4, 045024, 01.01.2014.

Research output: Contribution to journalArticle

Joo, Min Kyu ; Mouis, Mireille ; Jeon, Dae Young ; Barraud, Sylvain ; Park, So Jeong ; Kim, Gyu-Tae ; Ghibaudo, Gérard. / Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature. In: Semiconductor Science and Technology. 2014 ; Vol. 29, No. 4.
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