Flexible all-polymer field effect transistors with optical transparency using electrically conducting polymers

Myung Sub Lee, Han Saem Kang, Hyun Suk Kang, Jinsoo Joo, Arthur J. Epstein, Jun Young Lee

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

We fabricated the flexible All-polymer field effect transistors (FETs) with optical transparency, whose all components were the organic polymeric materials. Active channel and all three electrodes were formed on a flexible polymer substrate using the simple photolithographic patterning technique of the electrically conducting poly(3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy). Transparent photocrosslinkable polymers such as poly(vinyl cinnamate) or Epoxy/MAA polymer were used as the dielectric layer. We investigated the electrical characteristics of the FETs by measuring the source-drain current with sweeping the gate voltage. The source-drain current of the FETs decreased with increase of the positive gate voltage, implying the p-type FETs worked in the depletion mode. We believe the All-polymer FETs have significant advantages over other existing inorganic or organic FETs since the All-polymer FETs can be fabricated using the simple photolithographic process at room temperature and possess mechanical flexibility and optical transparency.

Original languageEnglish
Pages (from-to)169-173
Number of pages5
JournalThin Solid Films
Volume477
Issue number1-2
DOIs
Publication statusPublished - 2005 Apr 22

Fingerprint

Conducting polymers
conducting polymers
Field effect transistors
Transparency
Polymers
field effect transistors
polymers
Drain current
Cinnamates
Gates (transistor)
Organic field effect transistors
Electric potential
polypyrroles
Polypyrroles
electric potential
flexibility
depletion
Electrodes
conduction
Substrates

Keywords

  • All-polymer field effect transistor
  • Electrically conducting polymer
  • Photolithographic micropatterning
  • Poly(3,4-ethylenedioxythiophene)
  • Polypyrrole

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Flexible all-polymer field effect transistors with optical transparency using electrically conducting polymers. / Lee, Myung Sub; Kang, Han Saem; Kang, Hyun Suk; Joo, Jinsoo; Epstein, Arthur J.; Lee, Jun Young.

In: Thin Solid Films, Vol. 477, No. 1-2, 22.04.2005, p. 169-173.

Research output: Contribution to journalArticle

Lee, Myung Sub ; Kang, Han Saem ; Kang, Hyun Suk ; Joo, Jinsoo ; Epstein, Arthur J. ; Lee, Jun Young. / Flexible all-polymer field effect transistors with optical transparency using electrically conducting polymers. In: Thin Solid Films. 2005 ; Vol. 477, No. 1-2. pp. 169-173.
@article{3a938d5c96974a2795517287c740be98,
title = "Flexible all-polymer field effect transistors with optical transparency using electrically conducting polymers",
abstract = "We fabricated the flexible All-polymer field effect transistors (FETs) with optical transparency, whose all components were the organic polymeric materials. Active channel and all three electrodes were formed on a flexible polymer substrate using the simple photolithographic patterning technique of the electrically conducting poly(3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy). Transparent photocrosslinkable polymers such as poly(vinyl cinnamate) or Epoxy/MAA polymer were used as the dielectric layer. We investigated the electrical characteristics of the FETs by measuring the source-drain current with sweeping the gate voltage. The source-drain current of the FETs decreased with increase of the positive gate voltage, implying the p-type FETs worked in the depletion mode. We believe the All-polymer FETs have significant advantages over other existing inorganic or organic FETs since the All-polymer FETs can be fabricated using the simple photolithographic process at room temperature and possess mechanical flexibility and optical transparency.",
keywords = "All-polymer field effect transistor, Electrically conducting polymer, Photolithographic micropatterning, Poly(3,4-ethylenedioxythiophene), Polypyrrole",
author = "Lee, {Myung Sub} and Kang, {Han Saem} and Kang, {Hyun Suk} and Jinsoo Joo and Epstein, {Arthur J.} and Lee, {Jun Young}",
year = "2005",
month = "4",
day = "22",
doi = "10.1016/j.tsf.2004.08.128",
language = "English",
volume = "477",
pages = "169--173",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Flexible all-polymer field effect transistors with optical transparency using electrically conducting polymers

AU - Lee, Myung Sub

AU - Kang, Han Saem

AU - Kang, Hyun Suk

AU - Joo, Jinsoo

AU - Epstein, Arthur J.

AU - Lee, Jun Young

PY - 2005/4/22

Y1 - 2005/4/22

N2 - We fabricated the flexible All-polymer field effect transistors (FETs) with optical transparency, whose all components were the organic polymeric materials. Active channel and all three electrodes were formed on a flexible polymer substrate using the simple photolithographic patterning technique of the electrically conducting poly(3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy). Transparent photocrosslinkable polymers such as poly(vinyl cinnamate) or Epoxy/MAA polymer were used as the dielectric layer. We investigated the electrical characteristics of the FETs by measuring the source-drain current with sweeping the gate voltage. The source-drain current of the FETs decreased with increase of the positive gate voltage, implying the p-type FETs worked in the depletion mode. We believe the All-polymer FETs have significant advantages over other existing inorganic or organic FETs since the All-polymer FETs can be fabricated using the simple photolithographic process at room temperature and possess mechanical flexibility and optical transparency.

AB - We fabricated the flexible All-polymer field effect transistors (FETs) with optical transparency, whose all components were the organic polymeric materials. Active channel and all three electrodes were formed on a flexible polymer substrate using the simple photolithographic patterning technique of the electrically conducting poly(3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy). Transparent photocrosslinkable polymers such as poly(vinyl cinnamate) or Epoxy/MAA polymer were used as the dielectric layer. We investigated the electrical characteristics of the FETs by measuring the source-drain current with sweeping the gate voltage. The source-drain current of the FETs decreased with increase of the positive gate voltage, implying the p-type FETs worked in the depletion mode. We believe the All-polymer FETs have significant advantages over other existing inorganic or organic FETs since the All-polymer FETs can be fabricated using the simple photolithographic process at room temperature and possess mechanical flexibility and optical transparency.

KW - All-polymer field effect transistor

KW - Electrically conducting polymer

KW - Photolithographic micropatterning

KW - Poly(3,4-ethylenedioxythiophene)

KW - Polypyrrole

UR - http://www.scopus.com/inward/record.url?scp=14544271843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14544271843&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.08.128

DO - 10.1016/j.tsf.2004.08.128

M3 - Article

VL - 477

SP - 169

EP - 173

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -