Abstract
We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm2 V-1 s-1 for the p-channel and 0.027 cm2 V-1 s-1 for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.
| Original language | English |
|---|---|
| Article number | 225302 |
| Journal | Nanotechnology |
| Volume | 27 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2016 Apr 26 |
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Keywords
- ambipolarity
- complementary inverter
- field-effect transistors
- organic semiconductor
- printed electronics
- reverse offset printing
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)
Cite this
Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter. / Park, Junsu; Kim, Minseok; Yeom, Seung Won; Ha, Hyeon Jun; Song, Hyenggun; Min Jhon, Young; Kim, Yun Hi; Ju, Byeong Kwon.
In: Nanotechnology, Vol. 27, No. 22, 225302, 26.04.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter
AU - Park, Junsu
AU - Kim, Minseok
AU - Yeom, Seung Won
AU - Ha, Hyeon Jun
AU - Song, Hyenggun
AU - Min Jhon, Young
AU - Kim, Yun Hi
AU - Ju, Byeong Kwon
PY - 2016/4/26
Y1 - 2016/4/26
N2 - We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm2 V-1 s-1 for the p-channel and 0.027 cm2 V-1 s-1 for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.
AB - We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm2 V-1 s-1 for the p-channel and 0.027 cm2 V-1 s-1 for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.
KW - ambipolarity
KW - complementary inverter
KW - field-effect transistors
KW - organic semiconductor
KW - printed electronics
KW - reverse offset printing
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U2 - 10.1088/0957-4484/27/22/225302
DO - 10.1088/0957-4484/27/22/225302
M3 - Article
VL - 27
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 22
M1 - 225302
ER -