Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations

Changjoon Yoon, Taeho Moon, Myeongwon Lee, Gyoujin Cho, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)


High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (∼3300cm2V - 1s- 1), large Ion/Ioff ratio (∼108) and small subthreshold swing (∼70mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.

Original languageEnglish
Article number465202
Issue number46
Publication statusPublished - 2011 Nov 18


ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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