Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations

Changjoon Yoon, Taeho Moon, Myeongwon Lee, Gyoujin Cho, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (∼3300cm2V - 1s- 1), large Ion/Ioff ratio (∼108) and small subthreshold swing (∼70mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.

Original languageEnglish
Article number465202
JournalNanotechnology
Volume22
Issue number46
DOIs
Publication statusPublished - 2011 Nov 18

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MESFET devices
Nanowires
Semiconductors
Logic gates
Metals
Logic devices
Heavy ions
Plastics
gallium arsenide
Electric potential
Ions
Equipment and Supplies

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations. / Yoon, Changjoon; Moon, Taeho; Lee, Myeongwon; Cho, Gyoujin; Kim, Sangsig.

In: Nanotechnology, Vol. 22, No. 46, 465202, 18.11.2011.

Research output: Contribution to journalArticle

Yoon, Changjoon ; Moon, Taeho ; Lee, Myeongwon ; Cho, Gyoujin ; Kim, Sangsig. / Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations. In: Nanotechnology. 2011 ; Vol. 22, No. 46.
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