Flexible logic gates composed of Si-nanowire-based memristive switches

Taeho Moon, Ji Chul Jung, Yong Han, Youngin Jeon, Sang Mo Koo, Sangsig Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

Original languageEnglish
Article number6332494
Pages (from-to)3288-3291
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume59
Issue number12
DOIs
Publication statusPublished - 2012

Keywords

  • Flexible electronics
  • Si nanowire (NW)
  • logic gate
  • memristive switches
  • top-down approach

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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