Flexible logic gates composed of Si-nanowire-based memristive switches

Taeho Moon, Ji Chul Jung, Yong Han, Youngin Jeon, Sang Mo Koo, Sangsig Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

Original languageEnglish
Article number6332494
Pages (from-to)3288-3291
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume59
Issue number12
DOIs
Publication statusPublished - 2012 Oct 22

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Logic gates
Nanowires
Logic circuits
Switches
Flexible electronics
Plastics

Keywords

  • Flexible electronics
  • logic gate
  • memristive switches
  • Si nanowire (NW)
  • top-down approach

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Flexible logic gates composed of Si-nanowire-based memristive switches. / Moon, Taeho; Jung, Ji Chul; Han, Yong; Jeon, Youngin; Koo, Sang Mo; Kim, Sangsig.

In: IEEE Transactions on Electron Devices, Vol. 59, No. 12, 6332494, 22.10.2012, p. 3288-3291.

Research output: Contribution to journalArticle

Moon, Taeho ; Jung, Ji Chul ; Han, Yong ; Jeon, Youngin ; Koo, Sang Mo ; Kim, Sangsig. / Flexible logic gates composed of Si-nanowire-based memristive switches. In: IEEE Transactions on Electron Devices. 2012 ; Vol. 59, No. 12. pp. 3288-3291.
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