Flexible low-voltage pentacene memory thin-film transistors with combustion-processable Al2O3 gate dielectric and Au nanoparticles

Hyeon Jun Ha, Shin Woo Jeong, Tae Yeon Oh, Minseok Kim, Kookhyun Choi, Jung ho Park, Byeong Kwon Ju

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A Au nanoparticles (NPs) embedded pentacene thin-film transistor (TFT) with solution-based Al2O3 was fabricated on a polyethersulfone substrate. The TFT for low-voltage operation within -3 V was realized with the Al2O3 dielectric film. By a combustion process for Al 2O3, efficient driving of conversion reaction at low annealing temperature of 200 °C can be achieved and the device can be made on a plastic substrate. And, the Au NPs were deposited by the contact printing method using the polydimethylsiloxane stamp. From the electrical characteristics of the devices, a saturation mobility value of 4.25 cm2 V -1 s-1, threshold voltage (Vth) of ∼0.5 V, subthreshold swing of 70 mV dec-1 and memory window of 0.21 V at -3 V programming gate bias voltage were obtained.

Original languageEnglish
Article number235102
JournalJournal of Physics D: Applied Physics
Volume46
Issue number23
DOIs
Publication statusPublished - 2013 Jun 13

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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