Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Youngin Jeon, Myeongwon Lee, Taeho Moon, Sangsig Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

Original languageEnglish
Article number6294439
Pages (from-to)2939-2942
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume59
Issue number11
DOIs
Publication statusPublished - 2012 Sep 10

Keywords

  • Field-effect transistor (FET)
  • memory
  • nanocrystal (NC)
  • nonvolatile
  • plastic substrate
  • Pt
  • silicon-nanowire (Si-NW) array
  • top-down approach

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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