Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Youngin Jeon, Myeongwon Lee, Taeho Moon, Sangsig Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

Original languageEnglish
Article number6294439
Pages (from-to)2939-2942
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume59
Issue number11
DOIs
Publication statusPublished - 2012 Sep 10

Fingerprint

Nanowires
Data storage equipment
Field effect transistors
Threshold voltage
Nanocrystals
Electronic equipment
Plastics
Substrates

Keywords

  • Field-effect transistor (FET)
  • memory
  • nanocrystal (NC)
  • nonvolatile
  • plastic substrate
  • Pt
  • silicon-nanowire (Si-NW) array
  • top-down approach

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires. / Jeon, Youngin; Lee, Myeongwon; Moon, Taeho; Kim, Sangsig.

In: IEEE Transactions on Electron Devices, Vol. 59, No. 11, 6294439, 10.09.2012, p. 2939-2942.

Research output: Contribution to journalArticle

Jeon, Youngin ; Lee, Myeongwon ; Moon, Taeho ; Kim, Sangsig. / Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires. In: IEEE Transactions on Electron Devices. 2012 ; Vol. 59, No. 11. pp. 2939-2942.
@article{85bc27c0a2ba4f2e8e6e04738543f65a,
title = "Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires",
abstract = "The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.",
keywords = "Field-effect transistor (FET), memory, nanocrystal (NC), nonvolatile, plastic substrate, Pt, silicon-nanowire (Si-NW) array, top-down approach",
author = "Youngin Jeon and Myeongwon Lee and Taeho Moon and Sangsig Kim",
year = "2012",
month = "9",
day = "10",
doi = "10.1109/TED.2012.2211879",
language = "English",
volume = "59",
pages = "2939--2942",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

AU - Jeon, Youngin

AU - Lee, Myeongwon

AU - Moon, Taeho

AU - Kim, Sangsig

PY - 2012/9/10

Y1 - 2012/9/10

N2 - The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

AB - The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

KW - Field-effect transistor (FET)

KW - memory

KW - nanocrystal (NC)

KW - nonvolatile

KW - plastic substrate

KW - Pt

KW - silicon-nanowire (Si-NW) array

KW - top-down approach

UR - http://www.scopus.com/inward/record.url?scp=84867900822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867900822&partnerID=8YFLogxK

U2 - 10.1109/TED.2012.2211879

DO - 10.1109/TED.2012.2211879

M3 - Article

AN - SCOPUS:84867900822

VL - 59

SP - 2939

EP - 2942

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

M1 - 6294439

ER -