Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Youngin Jeon; Myeongwon Lee; Taeho Moon; Sangsig Kim

doi:10.1109/TED.2012.2211879

Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Youngin Jeon, Myeongwon Lee, Taeho Moon, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n ⁺-p-n ⁺ Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 ⁷ and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 ⁴s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

Original language	English
Article number	6294439
Pages (from-to)	2939-2942
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	11
DOIs	https://doi.org/10.1109/TED.2012.2211879
Publication status	Published - 2012

Keywords

Field-effect transistor (FET)
Pt
memory
nanocrystal (NC)
nonvolatile
plastic substrate
silicon-nanowire (Si-NW) array
top-down approach

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2211879

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title = "Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires",

abstract = "The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.",

keywords = "Field-effect transistor (FET), Pt, memory, nanocrystal (NC), nonvolatile, plastic substrate, silicon-nanowire (Si-NW) array, top-down approach",

author = "Youngin Jeon and Myeongwon Lee and Taeho Moon and Sangsig Kim",

note = "Funding Information: Manuscript received May 2, 2012; revised July 1, 2012; accepted July 31, 2012. Date of publication September 4, 2012; date of current version October 18, 2012. This work was partly supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World-Class University Project of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Seoul R&BD Program under Grant PA090914, and by the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires). The review of this paper was arranged by Editor G. Jeong.",

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language = "English",

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N1 - Funding Information: Manuscript received May 2, 2012; revised July 1, 2012; accepted July 31, 2012. Date of publication September 4, 2012; date of current version October 18, 2012. This work was partly supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World-Class University Project of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Seoul R&BD Program under Grant PA090914, and by the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires). The review of this paper was arranged by Editor G. Jeong.

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Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Abstract

Keywords

ASJC Scopus subject areas

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