Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor

Jong Won Chung, Yeong Hwan Ko, Young Ki Hong, Wongeon Song, Chulseung Jung, Hoyoung Tang, Jiyoul Lee, Min Hyung Lee, Bang Lin Lee, Jeong Il Park, Yongwan Jin, Sangyoon Lee, Jae Su Yu, Jongsun Park, Sunkook Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.

Original languageEnglish
Pages (from-to)3038-3042
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume15
Issue number11
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Multilayer films
Transistors
transistors
Polymers
Multilayers
Electric potential
electric potential
molybdenum disulfides
digital electronics
Logic gates
Digital circuits
polymers
Substrates
Thin film transistors
Leakage currents
Molybdenum
logic
high current
margins
CMOS

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor. / Chung, Jong Won; Ko, Yeong Hwan; Hong, Young Ki; Song, Wongeon; Jung, Chulseung; Tang, Hoyoung; Lee, Jiyoul; Lee, Min Hyung; Lee, Bang Lin; Park, Jeong Il; Jin, Yongwan; Lee, Sangyoon; Yu, Jae Su; Park, Jongsun; Kim, Sunkook.

In: Organic Electronics: physics, materials, applications, Vol. 15, No. 11, 01.01.2014, p. 3038-3042.

Research output: Contribution to journalArticle

Chung, JW, Ko, YH, Hong, YK, Song, W, Jung, C, Tang, H, Lee, J, Lee, MH, Lee, BL, Park, JI, Jin, Y, Lee, S, Yu, JS, Park, J & Kim, S 2014, 'Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor', Organic Electronics: physics, materials, applications, vol. 15, no. 11, pp. 3038-3042. https://doi.org/10.1016/j.orgel.2014.08.003
Chung, Jong Won ; Ko, Yeong Hwan ; Hong, Young Ki ; Song, Wongeon ; Jung, Chulseung ; Tang, Hoyoung ; Lee, Jiyoul ; Lee, Min Hyung ; Lee, Bang Lin ; Park, Jeong Il ; Jin, Yongwan ; Lee, Sangyoon ; Yu, Jae Su ; Park, Jongsun ; Kim, Sunkook. / Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor. In: Organic Electronics: physics, materials, applications. 2014 ; Vol. 15, No. 11. pp. 3038-3042.
@article{39cffbb6745240b69f3c0fbf405f27d0,
title = "Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor",
abstract = "We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.",
keywords = "Flexible circuit, Hybrid CMOS inverter, Molybdenum disulfide, Organic thin-film transistor, Transition metal dichalcogenide",
author = "Chung, {Jong Won} and Ko, {Yeong Hwan} and Hong, {Young Ki} and Wongeon Song and Chulseung Jung and Hoyoung Tang and Jiyoul Lee and Lee, {Min Hyung} and Lee, {Bang Lin} and Park, {Jeong Il} and Yongwan Jin and Sangyoon Lee and Yu, {Jae Su} and Jongsun Park and Sunkook Kim",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.orgel.2014.08.003",
language = "English",
volume = "15",
pages = "3038--3042",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",
number = "11",

}

TY - JOUR

T1 - Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor

AU - Chung, Jong Won

AU - Ko, Yeong Hwan

AU - Hong, Young Ki

AU - Song, Wongeon

AU - Jung, Chulseung

AU - Tang, Hoyoung

AU - Lee, Jiyoul

AU - Lee, Min Hyung

AU - Lee, Bang Lin

AU - Park, Jeong Il

AU - Jin, Yongwan

AU - Lee, Sangyoon

AU - Yu, Jae Su

AU - Park, Jongsun

AU - Kim, Sunkook

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.

AB - We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.

KW - Flexible circuit

KW - Hybrid CMOS inverter

KW - Molybdenum disulfide

KW - Organic thin-film transistor

KW - Transition metal dichalcogenide

UR - http://www.scopus.com/inward/record.url?scp=84907205671&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907205671&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2014.08.003

DO - 10.1016/j.orgel.2014.08.003

M3 - Article

AN - SCOPUS:84907205671

VL - 15

SP - 3038

EP - 3042

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

IS - 11

ER -