Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor

Jong Won Chung; Yeong Hwan Ko; Young Ki Hong; Wongeon Song; Chulseung Jung; Hoyoung Tang; Jiyoul Lee; Min Hyung Lee; Bang Lin Lee; Jeong Il Park; Yongwan Jin; Sangyoon Lee; Jae Su Yu; Jongsun Park; Sunkook Kim

doi:10.1016/j.orgel.2014.08.003

Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS₂thin film transistor

Jong Won Chung, Yeong Hwan Ko, Young Ki Hong, Wongeon Song, Chulseung Jung, Hoyoung Tang, Jiyoul Lee, Min Hyung Lee, Bang Lin Lee, Jeong Il Park, Yongwan Jin, Sangyoon Lee, Jae Su Yu, Jongsun Park, Sunkook Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS₂) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS₂NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.

Original language	English
Pages (from-to)	3038-3042
Number of pages	5
Journal	Organic Electronics
Volume	15
Issue number	11
DOIs	https://doi.org/10.1016/j.orgel.2014.08.003
Publication status	Published - 2014 Nov

Keywords

Flexible circuit
Hybrid CMOS inverter
Molybdenum disulfide
Organic thin-film transistor
Transition metal dichalcogenide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2014.08.003

Cite this

@article{39cffbb6745240b69f3c0fbf405f27d0,

title = "Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor",

abstract = "We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.",

keywords = "Flexible circuit, Hybrid CMOS inverter, Molybdenum disulfide, Organic thin-film transistor, Transition metal dichalcogenide",

author = "Chung, {Jong Won} and Ko, {Yeong Hwan} and Hong, {Young Ki} and Wongeon Song and Chulseung Jung and Hoyoung Tang and Jiyoul Lee and Lee, {Min Hyung} and Lee, {Bang Lin} and Park, {Jeong Il} and Yongwan Jin and Sangyoon Lee and Yu, {Jae Su} and Jongsun Park and Sunkook Kim",

note = "Funding Information: This research was also supported by the National Research Foundation of Korea ( 2013M3C1A3059590 and 2012R1A1A1042630 ) and partially supported by the Global Leading Technology Program funded by the Ministry of Trade, Industry and Energy, Korea (No. 10042537 ).",

year = "2014",

month = nov,

doi = "10.1016/j.orgel.2014.08.003",

language = "English",

volume = "15",

pages = "3038--3042",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

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T1 - Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor

AU - Chung, Jong Won

AU - Ko, Yeong Hwan

AU - Hong, Young Ki

AU - Song, Wongeon

AU - Jung, Chulseung

AU - Tang, Hoyoung

AU - Lee, Jiyoul

AU - Lee, Min Hyung

AU - Lee, Bang Lin

AU - Park, Jeong Il

AU - Jin, Yongwan

AU - Lee, Sangyoon

AU - Yu, Jae Su

AU - Park, Jongsun

AU - Kim, Sunkook

N1 - Funding Information: This research was also supported by the National Research Foundation of Korea ( 2013M3C1A3059590 and 2012R1A1A1042630 ) and partially supported by the Global Leading Technology Program funded by the Ministry of Trade, Industry and Energy, Korea (No. 10042537 ).

PY - 2014/11

Y1 - 2014/11

N2 - We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.

AB - We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.

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KW - Organic thin-film transistor

KW - Transition metal dichalcogenide

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