Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

Hye Won Yun; Ho Kun Woo; Soong Ju Oh; Sung Hoon Hong

doi:10.1016/j.cap.2019.11.019

Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

Hye Won Yun, Ho Kun Woo, Soong Ju Oh, Sung Hoon Hong

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.

Original language	English
Pages (from-to)	288-292
Number of pages	5
Journal	Current Applied Physics
Volume	20
Issue number	2
DOIs	https://doi.org/10.1016/j.cap.2019.11.019
Publication status	Published - 2020 Feb

Keywords

Flexible ReRAM
Low-temperature process
NiO nanocrystal
Solution-process

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2019.11.019

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@article{7b421ee459874490b1165617b372bc1e,

title = "Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process",

abstract = "In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.",

keywords = "Flexible ReRAM, Low-temperature process, NiO nanocrystal, Solution-process",

author = "Yun, {Hye Won} and Woo, {Ho Kun} and Oh, {Soong Ju} and Hong, {Sung Hoon}",

note = "Funding Information: This work was supported by the Ministry of Trade, Industry and Energy (Grant N0002310 ) and Electronics and Telecommunications Research Institute (ETRI) grant funded through the Korean government ( 18ZB1100 , Development of Basic Technologies of 3D Photo-Electronics). Publisher Copyright: {\textcopyright} 2019 Korean Physical Society",

year = "2020",

month = feb,

doi = "10.1016/j.cap.2019.11.019",

language = "English",

volume = "20",

pages = "288--292",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

AU - Yun, Hye Won

AU - Woo, Ho Kun

AU - Oh, Soong Ju

AU - Hong, Sung Hoon

N1 - Funding Information: This work was supported by the Ministry of Trade, Industry and Energy (Grant N0002310 ) and Electronics and Telecommunications Research Institute (ETRI) grant funded through the Korean government ( 18ZB1100 , Development of Basic Technologies of 3D Photo-Electronics). Publisher Copyright: © 2019 Korean Physical Society

PY - 2020/2

Y1 - 2020/2

N2 - In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.

AB - In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.

KW - Flexible ReRAM

KW - Low-temperature process

KW - NiO nanocrystal

KW - Solution-process

UR - http://www.scopus.com/inward/record.url?scp=85075510394&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2019.11.019

DO - 10.1016/j.cap.2019.11.019

M3 - Article

AN - SCOPUS:85075510394

SN - 1567-1739

VL - 20

SP - 288

EP - 292

JO - Current Applied Physics

JF - Current Applied Physics

IS - 2

ER -

Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

Abstract

Keywords

ASJC Scopus subject areas

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