Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

Hye Won Yun, Ho Kun Woo, Soong Ju Oh, Sung Hoon Hong

Research output: Contribution to journalArticle

Abstract

In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.

Original languageEnglish
Pages (from-to)288-292
Number of pages5
JournalCurrent Applied Physics
Volume20
Issue number2
DOIs
Publication statusPublished - 2020 Feb

    Fingerprint

Keywords

  • Flexible ReRAM
  • Low-temperature process
  • NiO nanocrystal
  • Solution-process

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this