Flexible organic thin-film transistors using single-walled carbon nanotubes as an activated channel

Jae Hong Kwon; Sang Il Shin; Myung Ho Chung; Ki Young Dong; James Jungho Pak; Byeong Kwon Ju

doi:10.1016/j.tsf.2010.04.052

Flexible organic thin-film transistors using single-walled carbon nanotubes as an activated channel

Jae Hong Kwon, Sang Il Shin, Myung Ho Chung, Ki Young Dong, James Jungho Pak, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article

Abstract

We report on the fabrication of organic thin-film transistors (OTFTs) with a spun cross linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) flexible substrate. To improve the electrical performance of OTFTs, we employed a random single-walled carbon nanotubes (SWNTs) network as a carrier transfer underlay without sacrificing the flexibility of the TFTs. The random SWNTs showed that they can act as a semiconducting channel and conduction path to shorten the channel length in our TFTs. The flexible thin-film transistors (TFTs) with a random SWNTs/pentacene bilayer as an active channel exhibited an improved saturation field effect mobility (μ_sat) of 2.6 × 10^{- 1} cm²/Vs compared to that of TFTs without the SWNTs underlay, while creating only a minor reduction of the current on/off ratio.

Original language	English
Pages (from-to)	6168-6173
Number of pages	6
Journal	Thin Solid Films
Volume	518
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2010.04.052
Publication status	Published - 2010 Sep 1

Keywords

Cross-linked poly-4-vinylphenol
Flexible organic thin-film transistors
Pentacene
Polyethersulphone
Single-walled carbon nanotubes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Kwon, J. H., Shin, S. I., Chung, M. H., Dong, K. Y., Pak, J. J., & Ju, B. K. (2010). Flexible organic thin-film transistors using single-walled carbon nanotubes as an activated channel. Thin Solid Films, 518(22), 6168-6173. https://doi.org/10.1016/j.tsf.2010.04.052

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abstract = "We report on the fabrication of organic thin-film transistors (OTFTs) with a spun cross linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) flexible substrate. To improve the electrical performance of OTFTs, we employed a random single-walled carbon nanotubes (SWNTs) network as a carrier transfer underlay without sacrificing the flexibility of the TFTs. The random SWNTs showed that they can act as a semiconducting channel and conduction path to shorten the channel length in our TFTs. The flexible thin-film transistors (TFTs) with a random SWNTs/pentacene bilayer as an active channel exhibited an improved saturation field effect mobility (μsat) of 2.6 × 10- 1 cm2/Vs compared to that of TFTs without the SWNTs underlay, while creating only a minor reduction of the current on/off ratio.",

keywords = "Cross-linked poly-4-vinylphenol, Flexible organic thin-film transistors, Pentacene, Polyethersulphone, Single-walled carbon nanotubes",

author = "Kwon, {Jae Hong} and Shin, {Sang Il} and Chung, {Myung Ho} and Dong, {Ki Young} and Pak, {James Jungho} and Ju, {Byeong Kwon}",

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AU - Shin, Sang Il

AU - Chung, Myung Ho

AU - Dong, Ki Young

AU - Pak, James Jungho

AU - Ju, Byeong Kwon

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AB - We report on the fabrication of organic thin-film transistors (OTFTs) with a spun cross linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) flexible substrate. To improve the electrical performance of OTFTs, we employed a random single-walled carbon nanotubes (SWNTs) network as a carrier transfer underlay without sacrificing the flexibility of the TFTs. The random SWNTs showed that they can act as a semiconducting channel and conduction path to shorten the channel length in our TFTs. The flexible thin-film transistors (TFTs) with a random SWNTs/pentacene bilayer as an active channel exhibited an improved saturation field effect mobility (μsat) of 2.6 × 10- 1 cm2/Vs compared to that of TFTs without the SWNTs underlay, while creating only a minor reduction of the current on/off ratio.

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