Flexible resistive switching memory devices composed of solution-processed GeO 2: S films

Isaac Chung, Kyoungah Cho, Junggwon Yun, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO 2 (GeO 2:S) on flexible substrates. The Al/GeO 2:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10 7 and the memory characteristics are retained after 10 4 s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10 3 cycles.

Original languageEnglish
Pages (from-to)122-125
Number of pages4
JournalMicroelectronic Engineering
Volume97
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

random access memory
Data storage equipment
sulfur
cycles
Bending tests
Substrates
Sulfur

Keywords

  • Doped GeO
  • Flexible memories
  • ReRAM
  • Unipolar

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Flexible resistive switching memory devices composed of solution-processed GeO 2 : S films. / Chung, Isaac; Cho, Kyoungah; Yun, Junggwon; Kim, Sangsig.

In: Microelectronic Engineering, Vol. 97, 01.09.2012, p. 122-125.

Research output: Contribution to journalArticle

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