Flexible semi-around gate silicon nanowire tunnel transistors with a sub- kT/q switch

Myeongwon Lee, Youngin Jeon, Minsuk Kim, Sangsig Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Tunnel field-effect transistors (TFETs) with a subthreshold swing (SS) < 60 mV/dec are expected to be active devices in low-power flexible systems, potentially lowering operational voltage by virtue of steep switching behavior via band-to-band tunneling. In silicon (Si) channel materials, however, it still remains a challenge to obtain SS smaller than 60 mV/dec. In this study, we experimentally demonstrate the sub-60 mV/dec operation of a flexible semi-around gate TFET on a plastic substrate using Si nanowires (SiNWs) as the channel material. With the combined advantages of selectively thinned SiNW channels (width ∼ 15 nm and height ∼ 40 nm) and high-κ (Al<inf>2</inf>O<inf>3</inf> ∼ 7 nm) gate dielectric, in conjunction with an abrupt degenerate source junction, the device with a channel length of ∼500 nm exhibits a minimal SS of ∼42 mV/dec at room temperature. Moreover, mechanical bendability of the device indicates that it has stable and good fatigue properties, providing an important step towards the realization of steep-slope switches for low-power and energy-efficient flexible electronics.

Original languageEnglish
Article number224502
JournalJournal of Applied Physics
Volume117
Issue number22
DOIs
Publication statusPublished - 2015 Jun 14

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tunnels
nanowires
transistors
switches
silicon
field effect transistors
slopes
room temperature
electronics
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Flexible semi-around gate silicon nanowire tunnel transistors with a sub- kT/q switch. / Lee, Myeongwon; Jeon, Youngin; Kim, Minsuk; Kim, Sangsig.

In: Journal of Applied Physics, Vol. 117, No. 22, 224502, 14.06.2015.

Research output: Contribution to journalArticle

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