Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °c

J. Y. Choi, Sangsig Kim, B. U. Hwang, N. E. Lee, S. Y. Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.

Original languageEnglish
Article number125007
JournalSemiconductor Science and Technology
Volume31
Issue number12
DOIs
Publication statusPublished - 2016 Nov 10

Fingerprint

Gate dielectrics
Thin film transistors
transistors
thin films
surface roughness
Surface roughness
Zinc Oxide
Indium
Mechanical stability
endurance
Silicon
Substrates
Buffer layers
Phenol
Zinc oxide
polyimides
Polyimides
zinc oxides
indium oxides
phenols

Keywords

  • hybrid gate dielectric
  • semiconductor
  • SiInZnO
  • thin film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °c. / Choi, J. Y.; Kim, Sangsig; Hwang, B. U.; Lee, N. E.; Lee, S. Y.

In: Semiconductor Science and Technology, Vol. 31, No. 12, 125007, 10.11.2016.

Research output: Contribution to journalArticle

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