Flexible silicon nanowire low-power ring oscillator featuring one-volt operation

Yoonjoong Kim, Youngin Jeon, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

Original languageEnglish
Pages (from-to)120-123
Number of pages4
JournalMicroelectronic Engineering
Volume145
DOIs
Publication statusPublished - 2015 Sep 1

Keywords

  • Flexible
  • Low-power
  • Ring oscillator
  • Silicon-nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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