Flexible silicon nanowire low-power ring oscillator featuring one-volt operation

Yoonjoong Kim, Youngin Jeon, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

Original languageEnglish
Pages (from-to)120-123
Number of pages4
JournalMicroelectronic Engineering
Volume145
DOIs
Publication statusPublished - 2015 Sep 1

Fingerprint

Silicon
Nanowires
nanowires
oscillators
inverters
rings
silicon
Formability
Field effect transistors
Fatigue of materials
Electric potential
CMOS
waveforms
field effect transistors
electric potential

Keywords

  • Flexible
  • Low-power
  • Ring oscillator
  • Silicon-nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Flexible silicon nanowire low-power ring oscillator featuring one-volt operation. / Kim, Yoonjoong; Jeon, Youngin; Kim, Sangsig.

In: Microelectronic Engineering, Vol. 145, 01.09.2015, p. 120-123.

Research output: Contribution to journalArticle

@article{527eeb47f9934c2e8cf41f397bd99c4c,
title = "Flexible silicon nanowire low-power ring oscillator featuring one-volt operation",
abstract = "In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7{\%}. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.",
keywords = "Flexible, Low-power, Ring oscillator, Silicon-nanowire",
author = "Yoonjoong Kim and Youngin Jeon and Sangsig Kim",
year = "2015",
month = "9",
day = "1",
doi = "10.1016/j.mee.2015.04.003",
language = "English",
volume = "145",
pages = "120--123",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Flexible silicon nanowire low-power ring oscillator featuring one-volt operation

AU - Kim, Yoonjoong

AU - Jeon, Youngin

AU - Kim, Sangsig

PY - 2015/9/1

Y1 - 2015/9/1

N2 - In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

AB - In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

KW - Flexible

KW - Low-power

KW - Ring oscillator

KW - Silicon-nanowire

UR - http://www.scopus.com/inward/record.url?scp=84926641631&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926641631&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.04.003

DO - 10.1016/j.mee.2015.04.003

M3 - Article

AN - SCOPUS:84926641631

VL - 145

SP - 120

EP - 123

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -