Floating-base BJT type ESD device for RFID chip

Jinyong Chung, Hee Bok Kang, Suk Kyoung Hong, Gyuhan Yoon, Man Young Sung, Bok Gil Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

N-WELL floating base is sandwiched between P+ emitter and P-WELL collector in the proposed floating base vertical PNP electro-static discharge (ESD) protection device. Floating base bipolar junction transistor (BJT) ESD protection device increases the current performance of the parasitic BJT in the ESD mode. During the negative voltage phase of RF antenna signal, the negative voltage range of RF antenna signal is extended to around -10 V at the high RF power field without latch-up failure. The minimum P+ anode layout area of the floating base type BJT ESD device is 400 mu 2 for the target ESD voltage of 2000 V in human body model (HBM) mode. The parasitic capacitance of the floating base type BJT ESD protection device is about 0.4 pF. The layout area of the proposed floating base type BJT ESD protection device is 50% smaller that of the conventional NMOS diode type ESD protection device for the target ESD voltage of 2000 V in HBM mode. The rewards of the floating base type BJT ESD device will come in the form of improved yields, higher reliability, and substantially lower costs of RFID chip manufacturing.

Original languageEnglish
Pages (from-to)45-52
Number of pages8
JournalIntegrated Ferroelectrics
Volume105
Issue number1
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

junction transistors
Bipolar transistors
bipolar transistors
Radio frequency identification (RFID)
floating
chips
Electric potential
Antennas
human body
electric potential
layouts
antennas
latch-up
Anodes
Diodes
Capacitance
accumulators
emitters
anodes
manufacturing

Keywords

  • BJT
  • CDM
  • ESD
  • FeRAM
  • Floating base
  • HBM
  • MM
  • PN-diode
  • RFID

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Control and Systems Engineering

Cite this

Chung, J., Kang, H. B., Hong, S. K., Yoon, G., Sung, M. Y., & Choi, B. G. (2009). Floating-base BJT type ESD device for RFID chip. Integrated Ferroelectrics, 105(1), 45-52. https://doi.org/10.1080/10584580903062457

Floating-base BJT type ESD device for RFID chip. / Chung, Jinyong; Kang, Hee Bok; Hong, Suk Kyoung; Yoon, Gyuhan; Sung, Man Young; Choi, Bok Gil.

In: Integrated Ferroelectrics, Vol. 105, No. 1, 01.12.2009, p. 45-52.

Research output: Contribution to journalArticle

Chung, J, Kang, HB, Hong, SK, Yoon, G, Sung, MY & Choi, BG 2009, 'Floating-base BJT type ESD device for RFID chip', Integrated Ferroelectrics, vol. 105, no. 1, pp. 45-52. https://doi.org/10.1080/10584580903062457
Chung, Jinyong ; Kang, Hee Bok ; Hong, Suk Kyoung ; Yoon, Gyuhan ; Sung, Man Young ; Choi, Bok Gil. / Floating-base BJT type ESD device for RFID chip. In: Integrated Ferroelectrics. 2009 ; Vol. 105, No. 1. pp. 45-52.
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