Floating body effect in partially depleted silicon nanowire transistors and potential capacitor-less one-transistor DRAM applications

Myeongwon Lee, Taeho Moon, Sangsig Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We present a capacitor-less 1T-DRAM cell on SiO$-2$ /Si substrates using a silicon nanowire (SiNW) as the channel material. The SiNWs are fabricated by a top-down route that is fully compatible with the current Si-based CMOS technology. Based on the observation of the floating body effect of a partially depleted (PD) silicon nanowire transistor (SNWT), its 1T-DRAM functionality and reliability characteristics are investigated. By virtue of the top-down route providing a printable form of the inverted triangular SiNWs, the PD SNWT 1T-DRAM cell can be applied on insulating plastic substrates for potential applications of flexible electronics.

Original languageEnglish
Article number6082450
Pages (from-to)355-359
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume11
Issue number2
DOIs
Publication statusPublished - 2012 Mar 1

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Dynamic random access storage
Nanowires
Transistors
Capacitors
Silicon
Flexible electronics
Substrates
Plastics

Keywords

  • 1T-DRAM
  • Capacitor-less
  • floating body effect
  • partially depleted (PD)
  • silicon nanowire transistor (SNWT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Floating body effect in partially depleted silicon nanowire transistors and potential capacitor-less one-transistor DRAM applications. / Lee, Myeongwon; Moon, Taeho; Kim, Sangsig.

In: IEEE Transactions on Nanotechnology, Vol. 11, No. 2, 6082450, 01.03.2012, p. 355-359.

Research output: Contribution to journalArticle

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