Flow-induced voltage generation in high-purity metallic and semiconducting carbon nanotubes

Seung Ho Lee, Duckjong Kim, Soohyun Kim, Chang-Soo Han

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We investigated the flow-induced voltage generation of single-walled carbon nanotubes (SWCNTs), comparing metallic and semiconducting types, flow velocity, and different ionic concentration solutions. The induced fluid-flow voltage was measured using a microfluidics chip that we fabricated with a SWCNT film embedded between its metal electrodes. We found that the voltage generated for semiconducting nanotubes was three times greater than that for metallic nanotubes and that both types of SWCNTs showed an unexpected reversal in signal sign, likely due to the switching of the major carrier between holes and electrons. These generated voltages increased proportionally for both types of SWCNTs as functions of flow velocity and ionic concentration.

Original languageEnglish
Article number104103
JournalApplied Physics Letters
Volume99
Issue number10
DOIs
Publication statusPublished - 2011 Sep 5

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purity
carbon nanotubes
electric potential
nanotubes
flow velocity
fluid flow
chips
electrodes
metals
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Flow-induced voltage generation in high-purity metallic and semiconducting carbon nanotubes. / Ho Lee, Seung; Kim, Duckjong; Kim, Soohyun; Han, Chang-Soo.

In: Applied Physics Letters, Vol. 99, No. 10, 104103, 05.09.2011.

Research output: Contribution to journalArticle

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