Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

Jihwan An, Young Beom Kim, Joong Sun Park, Joon Hyung Shim, Turgut M. Gür, Fritz B. Prinz

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

Original languageEnglish
Article number01A161
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume30
Issue number1
DOIs
Publication statusPublished - 2012 Jan

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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