Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition

Ji Hun Park, Samseok Jang, Dong Jin Byun, Joong Kee Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10- 4 Ω cm.

Original languageEnglish
Pages (from-to)6863-6867
Number of pages5
JournalThin Solid Films
Volume519
Issue number20
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

Organic Chemicals
gallium oxides
Gallium
Polyethylene Terephthalates
Electron cyclotron resonance
Fluorine
polyethylene terephthalate
Organic chemicals
Composite films
electron cyclotron resonance
Tin oxides
Polyethylene terephthalates
Oxides
tin oxides
Oxide films
metalorganic chemical vapor deposition
fluorine
Chemical vapor deposition
Metals
composite materials

Keywords

  • Composite film
  • ECR-CVD
  • Electrical and optical properties
  • Texture coefficient

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

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abstract = "The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10- 4 Ω cm.",
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T1 - Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition

AU - Park, Ji Hun

AU - Jang, Samseok

AU - Byun, Dong Jin

AU - Lee, Joong Kee

PY - 2011/8/1

Y1 - 2011/8/1

N2 - The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10- 4 Ω cm.

AB - The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10- 4 Ω cm.

KW - Composite film

KW - ECR-CVD

KW - Electrical and optical properties

KW - Texture coefficient

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