Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN

Dong Seok Leem, Tae Wook Kim, Takhee Lee, Ja Soon Jang, Young Woo Ok, Tae Yeon Seong

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Abstract

The authors report on the formation of cerium oxide-doped indium oxide (2.5 nm) Ag (250 nm) contacts to p-GaN. The contacts become Ohmic with a specific contact resistance of 3.42× 10-4 Ω cm2 upon annealing at 530 °C in air. X-ray photoemission spectroscopy (XPS) Ga 3d core levels obtained from the interface regions before and after annealing indicate a large band bending of p-GaN (about 1.7-1.8 eV), namely, an increase of Schottky barrier height. Based on the XPS, secondary ion mass spectroscopy, and capacitance-voltage data, possible transport mechanisms for the annealed contacts are described and discussed.

Original languageEnglish
Article number262115
JournalApplied Physics Letters
Volume89
Issue number26
DOIs
Publication statusPublished - 2006 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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