Formation mechanisms of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped Al0.15 Ga0.85 N

Ja Soon Jang, Tae Yeon Seong, Seong Ran Jeon

Research output: Contribution to journalArticle

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Abstract

The authors report on the formation of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped AlGaN. The contacts become Ohmic with a contact resistivity of (1.4±0.3) × 10-5 cm2 upon annealing at 600 °C for 1 min in a N2 ambient. The samples do not experience significant degradation of the specific contact resistance and the surface roughness even after annealing at 600 °C for 60 min. Based on x-ray photoelectron spectroscopy depth profile results, atomic force microscopy, and contact resistivity-temperature data, possible Ohmic formation and carrier transport mechanisms are described and discussed.

Original languageEnglish
Article number092129
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 2007 Sep 7

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low resistance
electric contacts
electrical resistivity
annealing
contact resistance
x ray spectroscopy
surface roughness
photoelectron spectroscopy
atomic force microscopy
degradation
profiles
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation mechanisms of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped Al0.15 Ga0.85 N. / Jang, Ja Soon; Seong, Tae Yeon; Jeon, Seong Ran.

In: Applied Physics Letters, Vol. 91, No. 9, 092129, 07.09.2007.

Research output: Contribution to journalArticle

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