Formation of a bcc (001)-textured CoFe layer by the insertion of an FeZr layer in multilayer-based stacks with perpendicular magnetic anisotropy

Tae Young Lee, Young Chan Won, Sang Ho Lim, Seong Rae Lee

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1 Citation (Scopus)

Abstract

The effects of inserting an amorphous FeZr layer between the [Pt/Co] multilayer and the CoFeB/MgO layer in stacks possessing perpendicular magnetic anisotropy are examined. A 1-nm-thick FeZr layer is effective in forming a bcc (001)-textured CoFe layer during annealing by suppression of crystallization at the interface with the multilayer, which is terminated in a close-packed plane. Because FeZr is magnetic, it has an advantage over Ta, an alternative material used for the same purpose. Efficient magnetic coupling between the multilayer and CoFeB/MgO occurs even for large FeZr layer thicknesses, so the magnetic properties of the stack are only weakly affected.

Original languageEnglish
Article number063002
JournalApplied Physics Express
Volume7
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1

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Magnetic anisotropy
insertion
Multilayers
anisotropy
Magnetic couplings
Magnetic properties
Crystallization
Annealing
retarding
crystallization
magnetic properties
annealing

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "The effects of inserting an amorphous FeZr layer between the [Pt/Co] multilayer and the CoFeB/MgO layer in stacks possessing perpendicular magnetic anisotropy are examined. A 1-nm-thick FeZr layer is effective in forming a bcc (001)-textured CoFe layer during annealing by suppression of crystallization at the interface with the multilayer, which is terminated in a close-packed plane. Because FeZr is magnetic, it has an advantage over Ta, an alternative material used for the same purpose. Efficient magnetic coupling between the multilayer and CoFeB/MgO occurs even for large FeZr layer thicknesses, so the magnetic properties of the stack are only weakly affected.",
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AU - Lee, Tae Young

AU - Won, Young Chan

AU - Lim, Sang Ho

AU - Lee, Seong Rae

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N2 - The effects of inserting an amorphous FeZr layer between the [Pt/Co] multilayer and the CoFeB/MgO layer in stacks possessing perpendicular magnetic anisotropy are examined. A 1-nm-thick FeZr layer is effective in forming a bcc (001)-textured CoFe layer during annealing by suppression of crystallization at the interface with the multilayer, which is terminated in a close-packed plane. Because FeZr is magnetic, it has an advantage over Ta, an alternative material used for the same purpose. Efficient magnetic coupling between the multilayer and CoFeB/MgO occurs even for large FeZr layer thicknesses, so the magnetic properties of the stack are only weakly affected.

AB - The effects of inserting an amorphous FeZr layer between the [Pt/Co] multilayer and the CoFeB/MgO layer in stacks possessing perpendicular magnetic anisotropy are examined. A 1-nm-thick FeZr layer is effective in forming a bcc (001)-textured CoFe layer during annealing by suppression of crystallization at the interface with the multilayer, which is terminated in a close-packed plane. Because FeZr is magnetic, it has an advantage over Ta, an alternative material used for the same purpose. Efficient magnetic coupling between the multilayer and CoFeB/MgO occurs even for large FeZr layer thicknesses, so the magnetic properties of the stack are only weakly affected.

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