Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

Jae Seong Park, Jae Ho Kim, Jun Yong Kim, Dae Hyun Kim, Jin Young Na, Sun Kyung Kim, Daesung Kang, Tae Yeon Seong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

Original languageEnglish
Article number045205
JournalNanotechnology
Volume28
Issue number4
DOIs
Publication statusPublished - 2017 Jan 27

Fingerprint

Nanowires
Spreaders
Tin oxides
Indium
Light emitting diodes
Electrodes
Light
aluminum gallium nitride
indium tin oxide
Sheet resistance
Bias voltage

Keywords

  • Ag nanowire
  • current spreading
  • ITO nanodot
  • NUV light-emitting diode

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes. / Park, Jae Seong; Kim, Jae Ho; Kim, Jun Yong; Kim, Dae Hyun; Na, Jin Young; Kim, Sun Kyung; Kang, Daesung; Seong, Tae Yeon.

In: Nanotechnology, Vol. 28, No. 4, 045205, 27.01.2017.

Research output: Contribution to journalArticle

Park, Jae Seong ; Kim, Jae Ho ; Kim, Jun Yong ; Kim, Dae Hyun ; Na, Jin Young ; Kim, Sun Kyung ; Kang, Daesung ; Seong, Tae Yeon. / Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes. In: Nanotechnology. 2017 ; Vol. 28, No. 4.
@article{2de0157ec054431c9049335d53466d59,
title = "Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes",
abstract = "Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98{\%} at 385 nm, while the values for ITO ND/Ag NW were 83{\%}-88{\%}. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24{\%}-62{\%} higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.",
keywords = "Ag nanowire, current spreading, ITO nanodot, NUV light-emitting diode",
author = "Park, {Jae Seong} and Kim, {Jae Ho} and Kim, {Jun Yong} and Kim, {Dae Hyun} and Na, {Jin Young} and Kim, {Sun Kyung} and Daesung Kang and Seong, {Tae Yeon}",
year = "2017",
month = "1",
day = "27",
doi = "10.1088/1361-6528/28/4/045205",
language = "English",
volume = "28",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "4",

}

TY - JOUR

T1 - Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

AU - Park, Jae Seong

AU - Kim, Jae Ho

AU - Kim, Jun Yong

AU - Kim, Dae Hyun

AU - Na, Jin Young

AU - Kim, Sun Kyung

AU - Kang, Daesung

AU - Seong, Tae Yeon

PY - 2017/1/27

Y1 - 2017/1/27

N2 - Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

AB - Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

KW - Ag nanowire

KW - current spreading

KW - ITO nanodot

KW - NUV light-emitting diode

UR - http://www.scopus.com/inward/record.url?scp=85007477164&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85007477164&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/28/4/045205

DO - 10.1088/1361-6528/28/4/045205

M3 - Article

C2 - 27991452

AN - SCOPUS:85007477164

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 4

M1 - 045205

ER -