Formation of europium-silicate thin films and their photoluminescence properties

Young Chul Shin, Dong Ho Kong, Won Chel Choi, Tae Geun Kim, Bum Jun Kim, Min Ho Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Strong photoluminescence (PL) centered at 600 nm was observed from europium-silicate thin films. The films were fabricated on Si(100) substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA) in a nitrogen ambient. The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction spectroscopy and Auger electron spectroscopy. The optical transitions associated with divalent europium ions are thought to be responsible for the intense red PL emitted from the europium-silicate thin films.

Original languageEnglish
Pages (from-to)1246-1249
Number of pages4
JournalJournal of the Korean Physical Society
Volume48
Issue number6
Publication statusPublished - 2006 Jun

Keywords

  • Europium silicate
  • Photoluminescence
  • Rapid thermal annealing
  • Red emission
  • rf-sputtering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Shin, Y. C., Kong, D. H., Choi, W. C., Kim, T. G., Kim, B. J., & Kim, M. H. (2006). Formation of europium-silicate thin films and their photoluminescence properties. Journal of the Korean Physical Society, 48(6), 1246-1249.