Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

Jun Ho Kim, Da Som Kim, Sun Kyung Kim, Young Zo Yoo, Jeong Hwan Lee, Sang Woo Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Electronic Materials
DOIs
Publication statusAccepted/In press - 2016 May 11

Keywords

  • Ag
  • flexible
  • InGaZnO
  • multilayer
  • transparent conducting electrode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

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