Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin-zinc oxide interlayer

Hyun Gi Hong, Woong Ki Hong, Keun Yong Ban, Takhee Lee, Tae Yeon Seong, June O. Song, I. T. Ferguson, Joon Seop Kwak

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the formation of high-quality ohmic contacts to p-GaN (N a = 4 × 1017/cm3) for UV flip-chip light-emitting diodes (LEDs) using a tin-zinc oxide (TZO) interlayer. It is shown that the TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ω cm2 and reflectance of 76% at 405 nm when annealed at 530°C. Near-UV LEDs made with the annealed TZO/Ag p-contacts give forward-bias voltage of 3.26 V at 20 mA, and higher output power than those with single Ag contacts. Based on transmission electron microscopy and electrical results, possible ohmic formation mechanisms are discussed.

Original languageEnglish
Pages (from-to)G280-G282
JournalElectrochemical and Solid-State Letters
Volume8
Issue number10
DOIs
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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