Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiNx/Al

Dong Seok Leem, Jeong Tae Maeng, Dae Yong Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have investigated Ag (2.5 nm)/TiNx (50 nm)/Al (200 nm) contacts for use in GaN-based flip-chip light emitting diodes (LEDs). The Ag/TiNx/Al contact becomes ohmic with specific contact resistance of 4.4 × 10-3 Ω cm2 when annealed at 430°C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nanodots when annealed. It is also shown that the TiNx barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiNx/Al contacts and are compared with those made with the annealed Ni/Au/Al contacts.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number6
DOIs
Publication statusPublished - 2005 Jul 4
Externally publishedYes

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiN<sub>x</sub>/Al'. Together they form a unique fingerprint.

  • Cite this