Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

J. O. Song, Dong Seok Leem, K. K. Kim, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages55-56
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Fingerprint

Ohmic contacts
Auger electron spectroscopy
Contact resistance
Photoelectron spectroscopy
X ray spectroscopy
Oxides
Metals
Air

Keywords

  • Contact resistance
  • Electrical resistance measurement
  • Electrons
  • Gallium nitride
  • Materials science and technology
  • Ohmic contacts
  • Optical films
  • Photoelectricity
  • Rapid thermal annealing
  • Spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Song, J. O., Leem, D. S., Kim, K. K., & Seong, T. Y. (2003). Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 55-56). [1239903] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239903

Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. / Song, J. O.; Leem, Dong Seok; Kim, K. K.; Seong, Tae Yeon.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 55-56 1239903.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Song, JO, Leem, DS, Kim, KK & Seong, TY 2003, Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239903, Institute of Electrical and Electronics Engineers Inc., pp. 55-56, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239903
Song JO, Leem DS, Kim KK, Seong TY. Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. In IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 55-56. 1239903 https://doi.org/10.1109/ISCS.2003.1239903
Song, J. O. ; Leem, Dong Seok ; Kim, K. K. ; Seong, Tae Yeon. / Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 55-56
@inproceedings{67b82db77198475eb17461b9ce0ebe23,
title = "Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides",
abstract = "We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.",
keywords = "Contact resistance, Electrical resistance measurement, Electrons, Gallium nitride, Materials science and technology, Ohmic contacts, Optical films, Photoelectricity, Rapid thermal annealing, Spectroscopy",
author = "Song, {J. O.} and Leem, {Dong Seok} and Kim, {K. K.} and Seong, {Tae Yeon}",
year = "2003",
doi = "10.1109/ISCS.2003.1239903",
language = "English",
isbn = "0780378202",
volume = "2003-January",
pages = "55--56",
booktitle = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

AU - Song, J. O.

AU - Leem, Dong Seok

AU - Kim, K. K.

AU - Seong, Tae Yeon

PY - 2003

Y1 - 2003

N2 - We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

AB - We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

KW - Contact resistance

KW - Electrical resistance measurement

KW - Electrons

KW - Gallium nitride

KW - Materials science and technology

KW - Ohmic contacts

KW - Optical films

KW - Photoelectricity

KW - Rapid thermal annealing

KW - Spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84943544779&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943544779&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2003.1239903

DO - 10.1109/ISCS.2003.1239903

M3 - Conference contribution

SN - 0780378202

VL - 2003-January

SP - 55

EP - 56

BT - IEEE International Symposium on Compound Semiconductors, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -