Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

J. O. Song, Dong Seok Leem, K. K. Kim, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages55-56
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

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Keywords

  • Contact resistance
  • Electrical resistance measurement
  • Electrons
  • Gallium nitride
  • Materials science and technology
  • Ohmic contacts
  • Optical films
  • Photoelectricity
  • Rapid thermal annealing
  • Spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Song, J. O., Leem, D. S., Kim, K. K., & Seong, T. Y. (2003). Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 55-56). [1239903] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239903