Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode

Su Kyung Kim; Jin Woo Cho; Hyeong Seop Im; Weon Cheol Lim; Sun Kyung Kim; Tae Yeon Seong

doi:10.1016/j.ceramint.2020.04.300

Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode

Su Kyung Kim, Jin Woo Cho, Hyeong Seop Im, Weon Cheol Lim, Sun Kyung Kim, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Sputter-deposited SrVO_x was employed to create transparent conducting SrVO_x/Ag/SrVO_x films and their optical-electrical properties were examined as functions of SrVO_x and Ag thicknesses. With the increase in the thickness of SrVO_x films from 15 to 45 nm in the SrVO_x/Ag/SrVO_x films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 × 10²² − 1.03 × 10²² cm⁻³, 3.15−2.76 Ω/sq., and 21.99−19.76 cm²/Vs, respectively. The 25 nm-thick SrVO_x-based multilayer gave the highest average transmittance (T_av) of 91.5%. The 25 nm-thick SrVO_x-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 × 10⁻³ Ω⁻¹. With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 × 10²² − 1.99 × 10²² cm⁻³, 15.56−22.46 cm²/Vs, and 1.97−6.48 Ω/sq., respectively. The T_av of the SrVO_x (25 nm)/Ag/SrVO_x (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVO_x (25 nm)/Ag (15 nm)/SrVO_x (25 nm) samples. Based on the phasor examination, the effect of the SrVO_x film thickness on the transmittance characteristics of the multilayers is described and discussed.

Original language	English
Pages (from-to)	19484-19490
Number of pages	7
Journal	Ceramics International
Volume	46
Issue number	11
DOIs	https://doi.org/10.1016/j.ceramint.2020.04.300
Publication status	Published - 2020 Aug 1

Keywords

Ag layer
Oxide/metal/oxide multilayer
Phasor analysis
SrVO
Transparent conducting electrode
Ultraviolet transparency

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2020.04.300

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@article{1bb8d52954e347ec928dd0b2c9fd326f,

title = "Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode",

abstract = "Sputter-deposited SrVOx was employed to create transparent conducting SrVOx/Ag/SrVOx films and their optical-electrical properties were examined as functions of SrVOx and Ag thicknesses. With the increase in the thickness of SrVOx films from 15 to 45 nm in the SrVOx/Ag/SrVOx films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 × 1022 − 1.03 × 1022 cm−3, 3.15−2.76 Ω/sq., and 21.99−19.76 cm2/Vs, respectively. The 25 nm-thick SrVOx-based multilayer gave the highest average transmittance (Tav) of 91.5%. The 25 nm-thick SrVOx-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 × 10−3 Ω−1. With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 × 1022 − 1.99 × 1022 cm−3, 15.56−22.46 cm2/Vs, and 1.97−6.48 Ω/sq., respectively. The Tav of the SrVOx (25 nm)/Ag/SrVOx (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVOx (25 nm)/Ag (15 nm)/SrVOx (25 nm) samples. Based on the phasor examination, the effect of the SrVOx film thickness on the transmittance characteristics of the multilayers is described and discussed.",

keywords = "Ag layer, Oxide/metal/oxide multilayer, Phasor analysis, SrVO, Transparent conducting electrode, Ultraviolet transparency",

author = "Kim, {Su Kyung} and Cho, {Jin Woo} and Im, {Hyeong Seop} and Lim, {Weon Cheol} and Kim, {Sun Kyung} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT (NRF-2017K1A1A2013160). Funding Information: This work was supported by the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT ( NRF-2017K1A1A2013160 ). Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd and Techna Group S.r.l.",

year = "2020",

month = aug,

day = "1",

doi = "10.1016/j.ceramint.2020.04.300",

language = "English",

volume = "46",

pages = "19484--19490",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

number = "11",

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TY - JOUR

T1 - Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode

AU - Kim, Su Kyung

AU - Cho, Jin Woo

AU - Im, Hyeong Seop

AU - Lim, Weon Cheol

AU - Kim, Sun Kyung

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT (NRF-2017K1A1A2013160). Funding Information: This work was supported by the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT ( NRF-2017K1A1A2013160 ). Publisher Copyright: © 2020 Elsevier Ltd and Techna Group S.r.l.

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Sputter-deposited SrVOx was employed to create transparent conducting SrVOx/Ag/SrVOx films and their optical-electrical properties were examined as functions of SrVOx and Ag thicknesses. With the increase in the thickness of SrVOx films from 15 to 45 nm in the SrVOx/Ag/SrVOx films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 × 1022 − 1.03 × 1022 cm−3, 3.15−2.76 Ω/sq., and 21.99−19.76 cm2/Vs, respectively. The 25 nm-thick SrVOx-based multilayer gave the highest average transmittance (Tav) of 91.5%. The 25 nm-thick SrVOx-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 × 10−3 Ω−1. With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 × 1022 − 1.99 × 1022 cm−3, 15.56−22.46 cm2/Vs, and 1.97−6.48 Ω/sq., respectively. The Tav of the SrVOx (25 nm)/Ag/SrVOx (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVOx (25 nm)/Ag (15 nm)/SrVOx (25 nm) samples. Based on the phasor examination, the effect of the SrVOx film thickness on the transmittance characteristics of the multilayers is described and discussed.

AB - Sputter-deposited SrVOx was employed to create transparent conducting SrVOx/Ag/SrVOx films and their optical-electrical properties were examined as functions of SrVOx and Ag thicknesses. With the increase in the thickness of SrVOx films from 15 to 45 nm in the SrVOx/Ag/SrVOx films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 × 1022 − 1.03 × 1022 cm−3, 3.15−2.76 Ω/sq., and 21.99−19.76 cm2/Vs, respectively. The 25 nm-thick SrVOx-based multilayer gave the highest average transmittance (Tav) of 91.5%. The 25 nm-thick SrVOx-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 × 10−3 Ω−1. With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 × 1022 − 1.99 × 1022 cm−3, 15.56−22.46 cm2/Vs, and 1.97−6.48 Ω/sq., respectively. The Tav of the SrVOx (25 nm)/Ag/SrVOx (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVOx (25 nm)/Ag (15 nm)/SrVOx (25 nm) samples. Based on the phasor examination, the effect of the SrVOx film thickness on the transmittance characteristics of the multilayers is described and discussed.

KW - Ag layer

KW - Oxide/metal/oxide multilayer

KW - Phasor analysis

KW - SrVO

KW - Transparent conducting electrode

KW - Ultraviolet transparency

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U2 - 10.1016/j.ceramint.2020.04.300

DO - 10.1016/j.ceramint.2020.04.300

M3 - Article

AN - SCOPUS:85088363947

VL - 46

SP - 19484

EP - 19490

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - 11

ER -

Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode

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