TY - JOUR
T1 - Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode
AU - Kim, Su Kyung
AU - Cho, Jin Woo
AU - Im, Hyeong Seop
AU - Lim, Weon Cheol
AU - Kim, Sun Kyung
AU - Seong, Tae Yeon
N1 - Funding Information:
This work was supported by the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT (NRF-2017K1A1A2013160).
Funding Information:
This work was supported by the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT ( NRF-2017K1A1A2013160 ).
Publisher Copyright:
© 2020 Elsevier Ltd and Techna Group S.r.l.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/8/1
Y1 - 2020/8/1
N2 - Sputter-deposited SrVOx was employed to create transparent conducting SrVOx/Ag/SrVOx films and their optical-electrical properties were examined as functions of SrVOx and Ag thicknesses. With the increase in the thickness of SrVOx films from 15 to 45 nm in the SrVOx/Ag/SrVOx films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 × 1022 − 1.03 × 1022 cm−3, 3.15−2.76 Ω/sq., and 21.99−19.76 cm2/Vs, respectively. The 25 nm-thick SrVOx-based multilayer gave the highest average transmittance (Tav) of 91.5%. The 25 nm-thick SrVOx-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 × 10−3 Ω−1. With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 × 1022 − 1.99 × 1022 cm−3, 15.56−22.46 cm2/Vs, and 1.97−6.48 Ω/sq., respectively. The Tav of the SrVOx (25 nm)/Ag/SrVOx (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVOx (25 nm)/Ag (15 nm)/SrVOx (25 nm) samples. Based on the phasor examination, the effect of the SrVOx film thickness on the transmittance characteristics of the multilayers is described and discussed.
AB - Sputter-deposited SrVOx was employed to create transparent conducting SrVOx/Ag/SrVOx films and their optical-electrical properties were examined as functions of SrVOx and Ag thicknesses. With the increase in the thickness of SrVOx films from 15 to 45 nm in the SrVOx/Ag/SrVOx films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 × 1022 − 1.03 × 1022 cm−3, 3.15−2.76 Ω/sq., and 21.99−19.76 cm2/Vs, respectively. The 25 nm-thick SrVOx-based multilayer gave the highest average transmittance (Tav) of 91.5%. The 25 nm-thick SrVOx-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 × 10−3 Ω−1. With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 × 1022 − 1.99 × 1022 cm−3, 15.56−22.46 cm2/Vs, and 1.97−6.48 Ω/sq., respectively. The Tav of the SrVOx (25 nm)/Ag/SrVOx (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVOx (25 nm)/Ag (15 nm)/SrVOx (25 nm) samples. Based on the phasor examination, the effect of the SrVOx film thickness on the transmittance characteristics of the multilayers is described and discussed.
KW - Ag layer
KW - Oxide/metal/oxide multilayer
KW - Phasor analysis
KW - SrVO
KW - Transparent conducting electrode
KW - Ultraviolet transparency
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U2 - 10.1016/j.ceramint.2020.04.300
DO - 10.1016/j.ceramint.2020.04.300
M3 - Article
AN - SCOPUS:85088363947
VL - 46
SP - 19484
EP - 19490
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
IS - 11
ER -