Abstract
We report the formation by chemical beam epitaxy (CBE) of InAs dots on GaAs(100) tilted 2° off toward the nearest (110). Atomic force microscope images and transmission electron microscope (TEM) photographs showed that highly uniform dots were grown in the Stranski-Krastanow growth mode. An average dot density of ∼10 10 cm -2 was obtained by changing the deposition thickness. The shape of the quantum dots was initially round and then became elongated along the [Oil] direction due to the preferential growth of InAs with increasing deposition thickness. TEM and transmission electron diffraction images also showed that 90% of the strains in the InAs islands grown at a 2 ML of InAs deposition were relieved by the formation of 90° misfit dislocations in the (ill) plane, whereas the strains were not relaxed in coherently grown islands with a 1 ML of InAs deposition. CBE growth of InAs is found to produce self-assembled InAs dots or wires with quantum sizes on highly lattice-mismatched GaAs(100) substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 537-540 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 31 |
| Issue number | 3 |
| Publication status | Published - 1997 Dec 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Formation of InAs quantum dots on GaAs(100) by chemical beam epitaxy. / Park, Seong Ju; Lee, H. T.; Kim, J. H.; Seong, Tae Yeon; Kim, Sung Bock; Ro, Jeong Rae; Lee, El Hang.
In: Journal of the Korean Physical Society, Vol. 31, No. 3, 01.12.1997, p. 537-540.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of InAs quantum dots on GaAs(100) by chemical beam epitaxy
AU - Park, Seong Ju
AU - Lee, H. T.
AU - Kim, J. H.
AU - Seong, Tae Yeon
AU - Kim, Sung Bock
AU - Ro, Jeong Rae
AU - Lee, El Hang
PY - 1997/12/1
Y1 - 1997/12/1
N2 - We report the formation by chemical beam epitaxy (CBE) of InAs dots on GaAs(100) tilted 2° off toward the nearest (110). Atomic force microscope images and transmission electron microscope (TEM) photographs showed that highly uniform dots were grown in the Stranski-Krastanow growth mode. An average dot density of ∼10 10 cm -2 was obtained by changing the deposition thickness. The shape of the quantum dots was initially round and then became elongated along the [Oil] direction due to the preferential growth of InAs with increasing deposition thickness. TEM and transmission electron diffraction images also showed that 90% of the strains in the InAs islands grown at a 2 ML of InAs deposition were relieved by the formation of 90° misfit dislocations in the (ill) plane, whereas the strains were not relaxed in coherently grown islands with a 1 ML of InAs deposition. CBE growth of InAs is found to produce self-assembled InAs dots or wires with quantum sizes on highly lattice-mismatched GaAs(100) substrates.
AB - We report the formation by chemical beam epitaxy (CBE) of InAs dots on GaAs(100) tilted 2° off toward the nearest (110). Atomic force microscope images and transmission electron microscope (TEM) photographs showed that highly uniform dots were grown in the Stranski-Krastanow growth mode. An average dot density of ∼10 10 cm -2 was obtained by changing the deposition thickness. The shape of the quantum dots was initially round and then became elongated along the [Oil] direction due to the preferential growth of InAs with increasing deposition thickness. TEM and transmission electron diffraction images also showed that 90% of the strains in the InAs islands grown at a 2 ML of InAs deposition were relieved by the formation of 90° misfit dislocations in the (ill) plane, whereas the strains were not relaxed in coherently grown islands with a 1 ML of InAs deposition. CBE growth of InAs is found to produce self-assembled InAs dots or wires with quantum sizes on highly lattice-mismatched GaAs(100) substrates.
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M3 - Article
VL - 31
SP - 537
EP - 540
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 3
ER -