Formation of InAs quantum dots on GaAs(100) by chemical beam epitaxy

Seong Ju Park, H. T. Lee, J. H. Kim, Tae Yeon Seong, Sung Bock Kim, Jeong Rae Ro, El Hang Lee

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We report the formation by chemical beam epitaxy (CBE) of InAs dots on GaAs(100) tilted 2° off toward the nearest (110). Atomic force microscope images and transmission electron microscope (TEM) photographs showed that highly uniform dots were grown in the Stranski-Krastanow growth mode. An average dot density of ∼10 10 cm -2 was obtained by changing the deposition thickness. The shape of the quantum dots was initially round and then became elongated along the [Oil] direction due to the preferential growth of InAs with increasing deposition thickness. TEM and transmission electron diffraction images also showed that 90% of the strains in the InAs islands grown at a 2 ML of InAs deposition were relieved by the formation of 90° misfit dislocations in the (ill) plane, whereas the strains were not relaxed in coherently grown islands with a 1 ML of InAs deposition. CBE growth of InAs is found to produce self-assembled InAs dots or wires with quantum sizes on highly lattice-mismatched GaAs(100) substrates.

Original languageEnglish
Pages (from-to)537-540
Number of pages4
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 1997 Dec 1
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Park, S. J., Lee, H. T., Kim, J. H., Seong, T. Y., Kim, S. B., Ro, J. R., & Lee, E. H. (1997). Formation of InAs quantum dots on GaAs(100) by chemical beam epitaxy. Journal of the Korean Physical Society, 31(3), 537-540.