Abstract
We report the formation by chemical beam epitaxy (CBE) of InAs dots on GaAs(100) tilted 2° off toward the nearest (110). Atomic force microscope images and transmission electron microscope (TEM) photographs showed that highly uniform dots were grown in the Stranski-Krastanow growth mode. An average dot density of ∼10 10 cm -2 was obtained by changing the deposition thickness. The shape of the quantum dots was initially round and then became elongated along the [Oil] direction due to the preferential growth of InAs with increasing deposition thickness. TEM and transmission electron diffraction images also showed that 90% of the strains in the InAs islands grown at a 2 ML of InAs deposition were relieved by the formation of 90° misfit dislocations in the (ill) plane, whereas the strains were not relaxed in coherently grown islands with a 1 ML of InAs deposition. CBE growth of InAs is found to produce self-assembled InAs dots or wires with quantum sizes on highly lattice-mismatched GaAs(100) substrates.
Original language | English |
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Pages (from-to) | 537-540 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 31 |
Issue number | 3 |
Publication status | Published - 1997 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)