Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

June O. Song, Kyung Kook Kim, Hyunsoo Kim, Yong Hyun Kim, Hyun Gi Hong, Hyeonseok Na, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.

Original languageEnglish
Pages (from-to)211-214
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume10
Issue number4-5
DOIs
Publication statusPublished - 2007 Aug

Keywords

  • Ag-Sn alloy
  • GaN
  • Indium tin oxide
  • Light-emitting diode
  • Ohmic contact

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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