Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

June O. Song, Kyung Kook Kim, Hyunsoo Kim, Yong Hyun Kim, Hyun Gi Hong, Hyeonseok Na, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.

Original languageEnglish
Pages (from-to)211-214
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume10
Issue number4-5
DOIs
Publication statusPublished - 2007 Aug 1

Fingerprint

Ohmic contacts
low resistance
Tin oxides
indium oxides
Indium
tin oxides
Light emitting diodes
electric contacts
Luminance
interlayers
brightness
light emitting diodes
Contact resistance
Bias voltage
contact resistance
transmittance
injection
Wavelength
indium tin oxide
output

Keywords

  • Ag-Sn alloy
  • GaN
  • Indium tin oxide
  • Light-emitting diode
  • Ohmic contact

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer. / Song, June O.; Kim, Kyung Kook; Kim, Hyunsoo; Kim, Yong Hyun; Hong, Hyun Gi; Na, Hyeonseok; Seong, Tae Yeon.

In: Materials Science in Semiconductor Processing, Vol. 10, No. 4-5, 01.08.2007, p. 211-214.

Research output: Contribution to journalArticle

Song, June O. ; Kim, Kyung Kook ; Kim, Hyunsoo ; Kim, Yong Hyun ; Hong, Hyun Gi ; Na, Hyeonseok ; Seong, Tae Yeon. / Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer. In: Materials Science in Semiconductor Processing. 2007 ; Vol. 10, No. 4-5. pp. 211-214.
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abstract = "We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91{\%} at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62{\%} (at 20 mA) compared with LEDs with Ni/Au contacts.",
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AU - Kim, Hyunsoo

AU - Kim, Yong Hyun

AU - Hong, Hyun Gi

AU - Na, Hyeonseok

AU - Seong, Tae Yeon

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N2 - We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.

AB - We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.

KW - Ag-Sn alloy

KW - GaN

KW - Indium tin oxide

KW - Light-emitting diode

KW - Ohmic contact

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