Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni-Mg solid solution

June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

The formation of Ni-Mg solid solution/Au schemes for the formation of low resistance and transparent ohmic contacts to p-GaN was investigated. The light transmittance of the 550°C contacts was measured to be 79% and 95.6% at 460 nm for the contacts with the individual layer thickness of 8 and 5 nm. The results indicated that the solid solution is a promising metallization scheme for the fabrication of high performance optical devices.

Original languageEnglish
Pages (from-to)3513-3515
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number17
DOIs
Publication statusPublished - 2003 Oct 27
Externally publishedYes

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low resistance
electric contacts
solid solutions
transmittance
fabrication

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni-Mg solid solution. / Song, June O.; Leem, Dong Seok; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 83, No. 17, 27.10.2003, p. 3513-3515.

Research output: Contribution to journalArticle

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