Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation

Min Suk Oh, Ja Soon Jang, Sang Ho Kim, Tae Yeon Seong

Research output: Contribution to journalConference article

Abstract

KrF excimer-laser-irradiation treatment in a N2 atmosphere is introduced to improve the electrical properties of p-type GaN and so to form low resistance nonalloyed Ni/Au ohmic contacts. The as-grown sample exhibits non-linear electrical behavior. However, the samples laser-annealed in N 2 ambient become ohmic with specific contact resistance of 8.9(±0.6)×10-5 Ωcm2. Hall measurement and current-voltage-temperature results show that the laser irradiation is effective in increasing a hole concentration in the surface region of p-GaN, leading to both the enhancement in field emission and the reduction of the effective Schottky barrier heights at the metal-semiconductor interface.

Original languageEnglish
Pages (from-to)1717-1720
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

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