Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes

Joon Woo Jeon, Seong Han Park, Se Yeon Jung, Sang Youl Lee, Jihyung Moon, June O. Song, Tae Yeon Seong

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We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al-Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al-Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al-Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1× 10-4 cm2, even after annealing at 250°C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.

Original languageEnglish
Article number092103
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2010 Aug 30


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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