Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

108 Citations (Scopus)

Abstract

Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10-2 Ωcm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)× 10-5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.

Original languageEnglish
Pages (from-to)2667-2670
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number6
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
surface treatment
Surface treatment
electric contacts
Contact resistance
Oxides
oxides
contact resistance
mesas
sulfides
Etching
etching
Electric potential
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment. / Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 17, No. 6, 01.12.1999, p. 2667-2670.

Research output: Contribution to journalArticle

@article{2015667f50094309aedd30174d5c87de,
title = "Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment",
abstract = "Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10-2 Ωcm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)× 10-5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.",
author = "Jang, {Ja Soon} and Park, {Seong J.} and Seong, {Tae Yeon}",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "17",
pages = "2667--2670",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

AU - Jang, Ja Soon

AU - Park, Seong J.

AU - Seong, Tae Yeon

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10-2 Ωcm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)× 10-5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.

AB - Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10-2 Ωcm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)× 10-5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.

UR - http://www.scopus.com/inward/record.url?scp=0040708810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040708810&partnerID=8YFLogxK

M3 - Article

VL - 17

SP - 2667

EP - 2670

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -