Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice

Ja Soon Jang, Seong J. Sohn, Donghwan Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86% at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.

Original languageEnglish
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

Ohmic contacts
low resistance
Carrier concentration
electric contacts
Annealing
Polarization
Wavelength
polarization
transmittance
electrical resistivity
annealing
wavelengths

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{6331ba492c114707bf241c4fccc2c38e,
title = "Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice",
abstract = "Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86{\%} at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.",
author = "Jang, {Ja Soon} and Sohn, {Seong J.} and Donghwan Kim and Seong, {Tae Yeon}",
year = "2006",
month = "5",
day = "1",
doi = "10.1088/0268-1242/21/5/L01",
language = "English",
volume = "21",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice

AU - Jang, Ja Soon

AU - Sohn, Seong J.

AU - Kim, Donghwan

AU - Seong, Tae Yeon

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86% at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.

AB - Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86% at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.

UR - http://www.scopus.com/inward/record.url?scp=33645673643&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645673643&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/5/L01

DO - 10.1088/0268-1242/21/5/L01

M3 - Article

AN - SCOPUS:33645673643

VL - 21

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

ER -