Abstract
Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86% at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.
| Original language | English |
|---|---|
| Journal | Semiconductor Science and Technology |
| Volume | 21 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2006 May 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice. / Jang, Ja Soon; Sohn, Seong J.; Kim, Donghwan; Seong, Tae Yeon.
In: Semiconductor Science and Technology, Vol. 21, No. 5, 01.05.2006.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice
AU - Jang, Ja Soon
AU - Sohn, Seong J.
AU - Kim, Donghwan
AU - Seong, Tae Yeon
PY - 2006/5/1
Y1 - 2006/5/1
N2 - Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86% at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.
AB - Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86% at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.
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U2 - 10.1088/0268-1242/21/5/L01
DO - 10.1088/0268-1242/21/5/L01
M3 - Article
AN - SCOPUS:33645673643
VL - 21
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 5
ER -