Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice

Ja Soon Jang, Seong Jin Sohn, Donghwan Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Low-resistance and transparent ohmic contacts are formed by using a strained p-In0.15Ga0.85N (3 nm thick) capping layer and oxidized Ni (5 nm)/Au (5 nm) scheme. Unlike as-deposited Ni/Au contacts to p-GaN (without the strained p-InGaN), as-deposited contacts to InGaN/GaN produce ohmic behaviour. Upon annealing, the Schottky barrier height (SBH) of the contacts to the InGaN/GaN is reduced down to 0.29 eV and so the samples yield a contact resistivity as low as 6.3 × 10-6 Ω cm 2. In addition, the annealed contacts give a light transmittance of 86% at a wavelength of 460 nm. Possible ohmic formation mechanisms for the Ni/Au contacts to InGaN/GaN are described in terms of a reduction of SBH, an increase of surface carrier concentration and the formation of a NiO:Au structure.

Original languageEnglish
Pages (from-to)L37-L39
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - 2006 May 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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