Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET

Gwang Sik Kim, Seung Hwan Kim, June Park, Sun Woo Kim, Hyun-Yong Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the plasma oxidation process is introduced into the metal-interlayer-semiconductor (M-I-S) structure to reduce the contact resistance of the metal/n-type germanium (n-Ge) contact. The GeOx layer formed by the plasma oxidation process acts as a good passivation layer between TiO2 and Ge, and also an additional metal induced gap states (MIGS) blocking layer. From these effects of the GeOx layer, the M-I-S structure with multilayered interlayer stack, TiO2/GeOx, shows approximately four orders of magnitude of the reverse current density improvement from the M-S contact. This technique can be a solution of the severe Fermi-level pinning (FLP) and the high contact resistance in source/drain (S/D) regions of the n-channel germanium field-effect transistor (FET).

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
PublisherElectrochemical Society Inc.
Pages127-129
Number of pages3
Volume72
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States
Duration: 2016 May 292016 Jun 2

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period16/5/2916/6/2

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET'. Together they form a unique fingerprint.

  • Cite this

    Kim, G. S., Kim, S. H., Park, J., Kim, S. W., & Yu, H-Y. (2016). Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 (4 ed., Vol. 72, pp. 127-129). Electrochemical Society Inc.. https://doi.org/10.1149/07204.0127ecst