@inproceedings{276fbb87199e48dcb66b5ca387f010dd,
title = "Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET",
abstract = "In this work, the plasma oxidation process is introduced into the metal-interlayer-semiconductor (M-I-S) structure to reduce the contact resistance of the metal/n-type germanium (n-Ge) contact. The GeOx layer formed by the plasma oxidation process acts as a good passivation layer between TiO2 and Ge, and also an additional metal induced gap states (MIGS) blocking layer. From these effects of the GeOx layer, the M-I-S structure with multilayered interlayer stack, TiO2/GeOx, shows approximately four orders of magnitude of the reverse current density improvement from the M-S contact. This technique can be a solution of the severe Fermi-level pinning (FLP) and the high contact resistance in source/drain (S/D) regions of the n-channel germanium field-effect transistor (FET).",
author = "Kim, {Gwang Sik} and Kim, {Seung Hwan} and June Park and Kim, {Sun Woo} and Yu, {Hyun Yong}",
note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (Grant 2014R1A1A1036090), the Technology Innovation Program (10048594, Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI Korea). Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",
year = "2016",
doi = "10.1149/07204.0127ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "127--129",
editor = "F. Roozeboom and V. Narayanan and K. Kakushima and Timans, {P. J.} and Gusev, {E. P.} and Z. Karim and {De Gendt}, S.",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6",
edition = "4",
}