Abstract
Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 ⁺μ Ω · cm⁺) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (⁺ρc values of 9.01 ⁺μ Ω · cm² for an NiGe/n⁺Ge contact and 3.61 ⁺μ Ω · cm² for an NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.
| Original language | English |
|---|---|
| Journal | IEEE Transactions on Electron Devices |
| DOIs | |
| Publication status | Accepted/In press - 2017 Apr 25 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Ahn, H. J., Moon, J., Seo, Y., Lee, T. I., Kim, C. K., Hwang, W. S., Yu, H-Y., & Cho, B. J. (Accepted/In press). Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film. IEEE Transactions on Electron Devices. https://doi.org/10.1109/TED.2017.2694456