Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Hyun Jun Ahn, Jungmin Moon, Yujin Seo, Tae In Lee, Choong Ki Kim, Wan Sik Hwang, Hyun Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealingprocess;theNi filmwith lowresistivity (34μΩ.cm) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (pc) values of 9.01 μΩ cm2 for an NiGe/n+Ge contact and 3.61 μΩ cm2 for an NiGe/p+Ge NiGe/p+Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

Original languageEnglish
Article number7911180
Pages (from-to)2599-2603
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume64
Issue number6
DOIs
Publication statusPublished - 2017 Jun

Keywords

  • Atomic layer deposition (ALD)
  • nickel germanide (NiGe)
  • sheet resistance
  • specific contact resistivity
  • transfer length method (TLM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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