Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Hyun Jun Ahn, Jungmin Moon, Yujin Seo, Tae In Lee, Choong Ki Kim, Wan Sik Hwang, Hyun-Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 ⁺μ Ω · cm⁺) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (⁺ρc values of 9.01 ⁺μ Ω · cm² for an NiGe/n⁺Ge contact and 3.61 ⁺μ Ω · cm² for an NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
DOIs
Publication statusAccepted/In press - 2017 Apr 25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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