Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Hyun Jun Ahn; Jungmin Moon; Yujin Seo; Tae In Lee; Choong Ki Kim; Wan Sik Hwang; Hyun-Yong Yu; Byung Jin Cho

doi:10.1109/TED.2017.2694456

Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Hyun Jun Ahn, Jungmin Moon, Yujin Seo, Tae In Lee, Choong Ki Kim, Wan Sik Hwang, Hyun-Yong Yu, Byung Jin Cho

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 ⁺μ Ω · cm⁺) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (⁺ρc values of 9.01 ⁺μ Ω · cm² for an NiGe/n⁺Ge contact and 3.61 ⁺μ Ω · cm² for an NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

Original language	English
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2017.2694456
Publication status	Accepted/In press - 2017 Apr 25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film",

abstract = "Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 ⁺μ Ω · cm⁺) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (⁺ρc values of 9.01 ⁺μ Ω · cm² for an NiGe/n⁺Ge contact and 3.61 ⁺μ Ω · cm² for an NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.",

author = "Ahn, {Hyun Jun} and Jungmin Moon and Yujin Seo and Lee, {Tae In} and Kim, {Choong Ki} and Hwang, {Wan Sik} and Hyun-Yong Yu and Cho, {Byung Jin}",

year = "2017",

month = apr,

day = "25",

doi = "10.1109/TED.2017.2694456",

language = "English",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

AU - Ahn, Hyun Jun

AU - Moon, Jungmin

AU - Seo, Yujin

AU - Lee, Tae In

AU - Kim, Choong Ki

AU - Hwang, Wan Sik

AU - Yu, Hyun-Yong

AU - Cho, Byung Jin

PY - 2017/4/25

Y1 - 2017/4/25

N2 - Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 ⁺μ Ω · cm⁺) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (⁺ρc values of 9.01 ⁺μ Ω · cm² for an NiGe/n⁺Ge contact and 3.61 ⁺μ Ω · cm² for an NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

AB - Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 ⁺μ Ω · cm⁺) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (⁺ρc values of 9.01 ⁺μ Ω · cm² for an NiGe/n⁺Ge contact and 3.61 ⁺μ Ω · cm² for an NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

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