Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 ⁺μ Ω · cm⁺) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (⁺ρc values of 9.01 ⁺μ Ω · cm² for an NiGe/n⁺Ge contact and 3.61 ⁺μ Ω · cm² for an NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering