Abstract
Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealingprocess;theNi filmwith lowresistivity (34μΩ.cm) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (pc) values of 9.01 μΩ cm2 for an NiGe/n+Ge contact and 3.61 μΩ cm2 for an NiGe/p+Ge NiGe/p+Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.
Original language | English |
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Article number | 7911180 |
Pages (from-to) | 2599-2603 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 64 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2017 Jun |
Keywords
- Atomic layer deposition (ALD)
- nickel germanide (NiGe)
- sheet resistance
- specific contact resistivity
- transfer length method (TLM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering