Formation of Ni-silicide at the interface of Ni4H-SiC

Younghun Jung, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report the relationship between the formation of Ni-silicide compounds and the change of the electrical behavior under different post-annealing conditions. Scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques were employed to study the formation of the various Ni-silicide compounds at the interface between Ni and 4H-SiC. Also, the electrical properties of the device were analyzed based on its current-voltage (I-V) characteristics under the same conditions. In our experiments, Ni2Si began to form at a post-annealing condition about 700°C. However, a good Ohmic behavior was observed at a post-annealing condition of 1000°C.

Original languageEnglish
Pages (from-to)H551-H553
JournalJournal of the Electrochemical Society
Volume158
Issue number5
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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