Formation of Ni-silicide at the interface of Ni4H-SiC

Younghun Jung, Ji Hyun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the relationship between the formation of Ni-silicide compounds and the change of the electrical behavior under different post-annealing conditions. Scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques were employed to study the formation of the various Ni-silicide compounds at the interface between Ni and 4H-SiC. Also, the electrical properties of the device were analyzed based on its current-voltage (I-V) characteristics under the same conditions. In our experiments, Ni2Si began to form at a post-annealing condition about 700°C. However, a good Ohmic behavior was observed at a post-annealing condition of 1000°C.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number5
DOIs
Publication statusPublished - 2011 Apr 4

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Annealing
annealing
Current voltage characteristics
Raman spectroscopy
Energy dispersive spectroscopy
Electric properties
X ray diffraction
Scanning electron microscopy
electrical properties
scanning electron microscopy
electric potential
Experiments
diffraction
spectroscopy
x rays
energy

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Formation of Ni-silicide at the interface of Ni4H-SiC. / Jung, Younghun; Kim, Ji Hyun.

In: Journal of the Electrochemical Society, Vol. 158, No. 5, 04.04.2011.

Research output: Contribution to journalArticle

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