Formation of nickel disilicide using nickel implantation and rapid thermal annealing

Chel Jong Choi, Sung Young Chang, Young Woo Ok, Tae Yeon Seong, H. Gan, G. Z. Pan, K. N. Tu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS), and x-ray photoemission spectroscopy (XPS) have been used to investigate the nucleation, growth, and ripening behavior of nickel-disilicide precipitates formed by Ni implantation in an amorphous-Si layer on (100) Si and followed by a two-step annealing treatment. The TEM and XPS results show that amorphous-disilicide precipitates are formed in a depth of ∼21 nm in the amorphous-Si layer when pre-annealed at 380°C for 30 sec. It is also shown that the second-step annealing at temperatures in the range of 450-600°C causes the amorphous precipitates to transform to randomly oriented crystalline ones embedded in the amorphous-Si layer. Annealing above 550°C is shown to induce the crystallization of amorphous Si by solid-phase epitaxial growth (SPEG). It is further shown that, in a prolonged annealing at high temperatures, the disilicide has dissolved and reprecipitated on the Si surface. Based on the roles of the silicide-mediated crystallization (SMC), the dissolution and reprecipitation of silicides, and SPEG, possible mechanisms are given to explain how the surface-disilicide islands are formed during annealing at temperatures of 550-950°C.

Original languageEnglish
Pages (from-to)1072-1078
Number of pages7
JournalJournal of Electronic Materials
Volume32
Issue number10
DOIs
Publication statusPublished - 2003 Oct

Keywords

  • Ni implantation
  • Nickel disilicide
  • Secondary ion mass spectroscopy
  • Transmission electron microscopy
  • X-ray photoemission spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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