Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots

Jung Inn Sohn, June O. Song, Dong Seok Leem, Seonghoon Lee, Tae Yeon Seong

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The effects of the insertion of Au nanodots (4-10 nm in diameter) at the Ni/GaN interface on the electrical properties of Ni/Au ohmic contacts to p-type GaN have been investigated. As-deposited Ni/Au contacts with Au nanodots show better electrical behavior than contacts without Au nanodots. Nanodot contacts produce a specific contact resistance of 8.4 × 10-4 Ω cm2. The multiquantum-well light-emitting diodes (LEDs) are fabricated with the nanodot Ni/Au contact layers. Nanodot LEDs show a lower operating voltage compared with LEDs made with a conventional Ni/Au contact layer.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number9
Publication statusPublished - 2004 Oct 18
Externally publishedYes


ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

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