Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots

Jung Inn Sohn, June O. Song, Dong Seok Leem, Seonghoon Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The effects of the insertion of Au nanodots (4-10 nm in diameter) at the Ni/GaN interface on the electrical properties of Ni/Au ohmic contacts to p-type GaN have been investigated. As-deposited Ni/Au contacts with Au nanodots show better electrical behavior than contacts without Au nanodots. Nanodot contacts produce a specific contact resistance of 8.4 × 10-4 Ω cm2. The multiquantum-well light-emitting diodes (LEDs) are fabricated with the nanodot Ni/Au contact layers. Nanodot LEDs show a lower operating voltage compared with LEDs made with a conventional Ni/Au contact layer.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number9
DOIs
Publication statusPublished - 2004 Oct 18
Externally publishedYes

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Ohmic contacts
low resistance
Light emitting diodes
electric contacts
light emitting diodes
Contact resistance
Electric properties
contact resistance
insertion
electrical properties
Electric potential
electric potential

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots. / Sohn, Jung Inn; Song, June O.; Leem, Dong Seok; Lee, Seonghoon; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 9, 18.10.2004.

Research output: Contribution to journalArticle

@article{d634322170494a0da33c2a276ea7edef,
title = "Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots",
abstract = "The effects of the insertion of Au nanodots (4-10 nm in diameter) at the Ni/GaN interface on the electrical properties of Ni/Au ohmic contacts to p-type GaN have been investigated. As-deposited Ni/Au contacts with Au nanodots show better electrical behavior than contacts without Au nanodots. Nanodot contacts produce a specific contact resistance of 8.4 × 10-4 Ω cm2. The multiquantum-well light-emitting diodes (LEDs) are fabricated with the nanodot Ni/Au contact layers. Nanodot LEDs show a lower operating voltage compared with LEDs made with a conventional Ni/Au contact layer.",
author = "Sohn, {Jung Inn} and Song, {June O.} and Leem, {Dong Seok} and Seonghoon Lee and Seong, {Tae Yeon}",
year = "2004",
month = "10",
day = "18",
doi = "10.1149/1.1773753",
language = "English",
volume = "7",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots

AU - Sohn, Jung Inn

AU - Song, June O.

AU - Leem, Dong Seok

AU - Lee, Seonghoon

AU - Seong, Tae Yeon

PY - 2004/10/18

Y1 - 2004/10/18

N2 - The effects of the insertion of Au nanodots (4-10 nm in diameter) at the Ni/GaN interface on the electrical properties of Ni/Au ohmic contacts to p-type GaN have been investigated. As-deposited Ni/Au contacts with Au nanodots show better electrical behavior than contacts without Au nanodots. Nanodot contacts produce a specific contact resistance of 8.4 × 10-4 Ω cm2. The multiquantum-well light-emitting diodes (LEDs) are fabricated with the nanodot Ni/Au contact layers. Nanodot LEDs show a lower operating voltage compared with LEDs made with a conventional Ni/Au contact layer.

AB - The effects of the insertion of Au nanodots (4-10 nm in diameter) at the Ni/GaN interface on the electrical properties of Ni/Au ohmic contacts to p-type GaN have been investigated. As-deposited Ni/Au contacts with Au nanodots show better electrical behavior than contacts without Au nanodots. Nanodot contacts produce a specific contact resistance of 8.4 × 10-4 Ω cm2. The multiquantum-well light-emitting diodes (LEDs) are fabricated with the nanodot Ni/Au contact layers. Nanodot LEDs show a lower operating voltage compared with LEDs made with a conventional Ni/Au contact layer.

UR - http://www.scopus.com/inward/record.url?scp=4944234715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944234715&partnerID=8YFLogxK

U2 - 10.1149/1.1773753

DO - 10.1149/1.1773753

M3 - Article

VL - 7

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 9

ER -