Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array laser

Tae Geun Kim, Sung M. Hwang, Seong I. Kim, Chang S. Son, Eun Kyu Kim, Suk K. Min, Jung ho Park, Kyung Hyun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Short-period GaAs quantum wire (QWR) array was grown by metalorganic chemical vapor deposition (MOCVD) on submicron gratings. And a new lithography technique to fabricate submicron current-blocking layer on the short-period QWR array without any external masks was developed. The methods include the followings. The photoresist was coated on the nonplanar top of the laser diode structure. The photoresist stripes were designed to remain over each QWR with a flood exposure and a develop technique. The GaAs contact layers on the parts of the (III)A and all the (100) top quantum wells (QWs) were removed by employing the photoresist remaining on the top valley as masks. The submicron current-blocking layer was produced all over the regions except QWR's, by sputtering SiO 2 film followed by lift-off and metal evaporation. It must help a majority of current pass into QWR active region.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsD.E. Seeger
Pages63-67
Number of pages5
Volume2723
DOIs
Publication statusPublished - 1996
EventElectron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI - Santa Clara, CA, United States
Duration: 1996 Mar 111996 Mar 13

Other

OtherElectron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI
CountryUnited States
CitySanta Clara, CA
Period96/3/1196/3/13

Fingerprint

Semiconductor quantum wires
laser arrays
quantum wires
aluminum gallium arsenides
Photoresists
photoresists
Lasers
Masks
masks
Metallorganic chemical vapor deposition
Lithography
Semiconductor quantum wells
metalorganic chemical vapor deposition
Sputtering
valleys
Semiconductor lasers
Evaporation
lithography
sputtering
semiconductor lasers

Keywords

  • Lithography technique
  • Metalorganic chemical vapor deposition
  • Short-period quantum wire array
  • Submicron current-blocking layer
  • Submicron gratings

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Kim, T. G., Hwang, S. M., Kim, S. I., Son, C. S., Kim, E. K., Min, S. K., ... Park, K. H. (1996). Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array laser. In D. E. Seeger (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2723, pp. 63-67) https://doi.org/10.1117/12.240497

Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array laser. / Kim, Tae Geun; Hwang, Sung M.; Kim, Seong I.; Son, Chang S.; Kim, Eun Kyu; Min, Suk K.; Park, Jung ho; Park, Kyung Hyun.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / D.E. Seeger. Vol. 2723 1996. p. 63-67.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, TG, Hwang, SM, Kim, SI, Son, CS, Kim, EK, Min, SK, Park, JH & Park, KH 1996, Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array laser. in DE Seeger (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2723, pp. 63-67, Electron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI, Santa Clara, CA, United States, 96/3/11. https://doi.org/10.1117/12.240497
Kim TG, Hwang SM, Kim SI, Son CS, Kim EK, Min SK et al. Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array laser. In Seeger DE, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2723. 1996. p. 63-67 https://doi.org/10.1117/12.240497
Kim, Tae Geun ; Hwang, Sung M. ; Kim, Seong I. ; Son, Chang S. ; Kim, Eun Kyu ; Min, Suk K. ; Park, Jung ho ; Park, Kyung Hyun. / Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array laser. Proceedings of SPIE - The International Society for Optical Engineering. editor / D.E. Seeger. Vol. 2723 1996. pp. 63-67
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