Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array laser

Tae Geun Kim, Sung Min Hwang, Seong Il Kim, Chang Sik Son, Eun Kyu Kim, Suk Ki Min, Jung Ho Park, Kyung Hyun Park

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Short-period GaAs quantum wire (QWR) array was grown by metalorganic chemical vapor deposition (MOCVD) on submicron gratings. And a new lithography technique to fabricate submicron current-blocking layer on the short-period QWR array without any external masks was developed. The methods include the followings. The photoresist was coated on the nonplanar top of the laser diode structure. The photoresist stripes were designed to remain over each QWR with a flood exposure and a develop technique. The GaAs contact layers on the parts of the (III)A and all the (100) top quantum wells (QWs) were removed by employing the photoresist remaining on the top valley as masks. The submicron current-blocking layer was produced all over the regions except QWR's, by sputtering SiO2 film followed by lift-off and metal evaporation. It must help a majority of current pass into QWR active region.

Original languageEnglish
Pages (from-to)63-67
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2723
DOIs
Publication statusPublished - 1996
EventElectron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI - Santa Clara, CA, United States
Duration: 1996 Mar 111996 Mar 13

Keywords

  • Lithography technique
  • Metalorganic chemical vapor deposition
  • Short-period quantum wire array
  • Submicron current-blocking layer
  • Submicron gratings

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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