Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

Young W. Ok, Chel Jong Choi, Jeong T. Maeng, Tae Yeon Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of argon plasma treatment on the structural and electrical properties of Ni suicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500-750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the suicide films.

Original languageEnglish
Pages (from-to)916-922
Number of pages7
JournalJournal of Electronic Materials
Volume33
Issue number8
Publication statusPublished - 2004 Aug 1
Externally publishedYes

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Keywords

  • Argon plasma
  • Ni native oxide
  • Ni-silicides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

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